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MT29F4G08ABBDAH4-IT:D

Name: MT29F4G08ABBDAH4-IT:D
Rating: 4.8 (15 reviews)

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IC FLASH 4GBIT PARALLEL 63VFBGA

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제조업체 부품 #MT29F4G08ABBDAH4-IT:D
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사양

속성	가치
Part Status	Last Time Buy
Base Product Number	MT29F4G08
Digi Key Programmable	Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND
Memory Size	4Gbit
Memory Organization	512M x 8
Memory Interface	Parallel
Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	63-VFBGA
Supplier Device Package	63-VFBGA (9x11)
Packaging	Tray

개요

Description

The MT29F4G08ABBDAH4-IT:D is a NAND flash memory device manufactured by Micron Technology. It features a 4Gb (gigabit) capacity and is designed for use in a variety of applications, including embedded systems, consumer electronics, and industrial devices. This particular model utilizes SLC (Single-Level Cell) technology, which stores one bit per cell, offering higher endurance and reliability compared to multi-level cell technologies. The device operates with a 3.3V power supply and offers an industrial temperature range, making it suitable for challenging environmental conditions.
The MT29F4G08ABBDAH4-IT:D supports a standard NAND interface, which simplifies integration into existing systems. It provides high-speed data transfer rates and efficient operations, crucial for applications requiring rapid read and write processes. Additionally, the device includes features like wear leveling and bad block management to maximize its lifespan and performance. With its compact form factor and robust design, the MT29F4G08ABBDAH4-IT:D is a versatile solution for meeting the demanding storage needs of modern electronic applications.

Equivalent

The MT29F4G08ABBDAH4-IT:D is a 4Gb NAND Flash memory chip from Micron. Equivalent products from other manufacturers include:
1. Samsung K9K4G08U0D: A 4Gb NAND Flash memory with similar specifications.
2. Toshiba TC58NVG2S0H: A 4Gb NAND Flash chip offering comparable performance and features.
3. Hynix H27U4G8F2D: Another 4Gb NAND Flash option with equivalent functionality.
Check datasheets for specific compatibility and requirements.

Features

The MT29F4G08ABBDAH4-IT:D is a NAND Flash memory chip by Micron Technology, designed for efficient storage solutions. Key features include:
1. Capacity: 4Gb (Gigabit) memory size, allowing substantial data storage.
2. Architecture: Single-level cell (SLC) NAND, which offers higher endurance and reliability than multi-level cell designs.
3. Interface: Operates with an asynchronous interface, suitable for various applications.
4. Performance: Fast read and write speeds, enhancing data transfer efficiency.
5. Endurance: High endurance cycle count, typically 100,000 program/erase cycles, supporting long-term usage.
6. Operating Temperature: Industrial temperature range from -40°C to +85°C, making it suitable for harsh environments.
7. Package: Available in a TSOP (Thin Small Outline Package), which is compact for space-constrained applications.
8. Data Retention: Offers reliable data retention for up to 10 years, ensuring data integrity over time.
These attributes make the MT29F4G08ABBDAH4-IT:D an excellent choice for applications requiring robust and reliable flash memory, such as industrial, automotive, and consumer electronics.

Pinout

The MT29F4G08ABBDAH4-IT:D is a NAND flash memory chip manufactured by Micron Technology. It features a total of 48 pins. The primary function of this chip is to store data in non-volatile memory cells, making it suitable for a variety of data storage applications. It is organized in a 4 Gigabit (512 Megabytes) capacity with an 8-bit interface.
Key functions and pin assignments include:
- Power and Ground: VCC and VSS pins provide power to the chip.
- I/O Pins: I/O0–I/O7 are used for data input and output.
- Control Pins: CLE (Command Latch Enable), ALE (Address Latch Enable), CE# (Chip Enable), WE# (Write Enable), RE# (Read Enable), and WP# (Write Protect) control the operation of the chip.
- Ready/Busy Output: R/B# indicates the status of the chip.
- Other Pins: Features additional pins for functions like ECC and test modes.
This NAND flash memory is typically used in consumer electronics, embedded systems, and other applications requiring reliable non-volatile storage.

Manufacturer

The MT29F4G08ABBDAH4-IT:D is manufactured by Micron Technology, Inc. Micron is an American multinational corporation and one of the largest manufacturers of computer memory and data storage solutions, including dynamic random-access memory (DRAM), flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron has grown to become a significant player in the global semiconductor industry. The company focuses on providing innovative memory and storage solutions that are essential for computing, networking, and mobile applications. Micron's products are widely used in a variety of electronic devices such as personal computers, servers, smartphones, and consumer electronics, playing a crucial role in enabling high-performance computing and data management.

Application

The MT29F4G08ABBDAH4-IT:D is a NAND Flash memory chip primarily used in data storage applications. It is commonly found in consumer electronics, such as smartphones, tablets, and digital cameras, where reliable and efficient data storage is essential. Additionally, it is utilized in industrial applications, including embedded systems and automotive electronics, where robust performance in variable temperature conditions is necessary. Its high-density storage capability makes it suitable for solid-state drives (SSDs) in computers and servers, enhancing data retrieval speeds and system performance.

Package

The MT29F4G08ABBDAH4-IT:D is a NAND Flash memory chip from Micron. It comes in a 48-pin TSOP (Thin Small Outline Package) type. TSOP is commonly used for memory ICs due to its compact form factor, making it suitable for space-constrained applications.

Frequently Asked Questions

Q: What is the memory capacity and organization of this NAND Flash?
A: It is a 4Gbit (4Gb) device organized as 512M x 8 bits, suitable for high-density data storage applications.

Q: What is the operating voltage range for this Micron NAND Flash?
A: The voltage supply range is 1.7V to 1.95V, making it compatible with low-power 1.8V systems.

Q: Can this component operate in extreme temperature environments?
A: Yes, it supports an industrial temperature range of -40°C to 85°C (TA), ensuring reliability in harsh conditions.

Q: What interface type does this memory use?
A: It uses a Parallel memory interface, allowing for high-speed data transfers via standard NAND control signals.

Q: What is the package type and size of the MT29F4G08ABBDAH4-IT:D?
A: It comes in a 63-VFBGA surface mount package, with a supplier device package size of 9x11mm.

Q: Is this component suitable for new designs or is it end-of-life?
A: Its part status is "Last Time Buy", indicating it is not recommended for new designs and is nearing end-of-life.

Q: Is this memory volatile or non-volatile?
A: It is Non-Volatile memory, meaning data is retained even when power is removed, ideal for code and data storage.

Q: What is the memory technology used in this IC?
A: It uses FLASH - NAND technology, which offers high density and fast write/erase capabilities for bulk storage.