사양
| 속성 | 가치 |
| Package | Bulk |
| ProductStatus | Obsolete |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND |
| MemorySize | 4Gb (512M x 8) |
| MemoryInterface | Parallel |
| Voltage-Supply | 1.7V ~ 1.95V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 63-VFBGA |
개요
Description
MT29F4G08ABBEAH4-IT:E is Micron’s 4‑Gbit NAND Flash memory with an 8‑bit (x8) data interface. It provides up to about 512 MB of user data and is designed for embedded and industrial storage applications. The device is typically organized with 2 KB data pages and a 64‑byte spare area, with multi‑plane operation for higher throughput. It adheres to ONFi standards (timing/protocol) and supports standard NAND functions such as random read, program, erase, page‑level ECC, bad‑block management, and wear leveling by the host controller. The IT suffix denotes industrial temperature rating (-40°C to +85°C) and usually RoHS‑compliant, lead‑free packaging. The trailing :E, in some cases, indicates a revision or packaging variant. For exact page/spare sizes, block count, timings, and supply voltages, refer to the latest Micron datasheet for this exact part number.
Features
MT29F4G08ABBEAH-IT:E is a 4 Gb NAND Flash device. Key features:
- Type: Multi-Level Cell (MLC) NAND flash
- Interface: ONFI-compliant asynchronous NAND
- Capacity: 4 gigabits (≈512 MB)
- Page/Spare: 2 KB data page with ~64 B spare
- Block structure: 4,096 blocks per die; 64 pages per block (~128 KB per block)
- ECC/Wear: built-in/host ECC support; wear leveling; bad-block management
- Endurance: typical ~10,000 program/erase cycles
- Data retention: >10 years
- Temperature: industrial range (-40°C to 85°C)
- Applications: embedded storage, bulk data/logging, portable devices requiring reliable non-volatile memory
Note: exact voltages and timing can vary; refer to the official datasheet for precise electrical specs and JR/IT:E variant details.
- Type: Multi-Level Cell (MLC) NAND flash
- Interface: ONFI-compliant asynchronous NAND
- Capacity: 4 gigabits (≈512 MB)
- Page/Spare: 2 KB data page with ~64 B spare
- Block structure: 4,096 blocks per die; 64 pages per block (~128 KB per block)
- ECC/Wear: built-in/host ECC support; wear leveling; bad-block management
- Endurance: typical ~10,000 program/erase cycles
- Data retention: >10 years
- Temperature: industrial range (-40°C to 85°C)
- Applications: embedded storage, bulk data/logging, portable devices requiring reliable non-volatile memory
Note: exact voltages and timing can vary; refer to the official datasheet for precise electrical specs and JR/IT:E variant details.
Pinout
Pin count: 48 pins (standard 48‑pin TSOP II package).
Function: Micron MT29F4G08ABBEAH4-IT:E is a 4‑gigabit NAND flash memory with an 8‑bit data bus (x8). It uses an ONFi-compatible interface with:
- Data pins: DQ0–DQ7
- Command/address control: CLE (command latch enable) and ALE (address latch enable)
- I/O control: WE_n (write enable), RE_n (read enable), CE_n (chip enable), WP_n (write protect)
- Status: R/B_n (ready/busy)
- Power/ground: Vcc, Vccq, Vss
- Typically some NC pins (no connect)
This device stores data in NAND flash blocks/pages and interfaces via the multiplexed address/command scheme typical of NAND memories.
Function: Micron MT29F4G08ABBEAH4-IT:E is a 4‑gigabit NAND flash memory with an 8‑bit data bus (x8). It uses an ONFi-compatible interface with:
- Data pins: DQ0–DQ7
- Command/address control: CLE (command latch enable) and ALE (address latch enable)
- I/O control: WE_n (write enable), RE_n (read enable), CE_n (chip enable), WP_n (write protect)
- Status: R/B_n (ready/busy)
- Power/ground: Vcc, Vccq, Vss
- Typically some NC pins (no connect)
This device stores data in NAND flash blocks/pages and interfaces via the multiplexed address/command scheme typical of NAND memories.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- It is an American multinational semiconductor company that designs and manufactures memory and storage products (NAND flash, DRAM).
- It is an American multinational semiconductor company that designs and manufactures memory and storage products (NAND flash, DRAM).
Application
MT29F4G08ABBEAH4-IT:E is a 4 Gbit NAND flash with industrial temperature rating (-40°C to 85°C). Typical application areas:
- Automotive electronics (ECUs, infotainment, telematics)
- Industrial automation (PLCs, HMIs, data loggers)
- Networking/telecom equipment (routers, switches, edge gateways)
- Embedded medical devices (portable monitors, diagnostic tools)
- Consumer electronics needing rugged storage (set-top boxes, cameras, media players)
- IoT and smart devices (edge sensors, gateways) for firmware storage, logs, and data storage
- Automotive electronics (ECUs, infotainment, telematics)
- Industrial automation (PLCs, HMIs, data loggers)
- Networking/telecom equipment (routers, switches, edge gateways)
- Embedded medical devices (portable monitors, diagnostic tools)
- Consumer electronics needing rugged storage (set-top boxes, cameras, media players)
- IoT and smart devices (edge sensors, gateways) for firmware storage, logs, and data storage
Package
FBGA-48 (48-ball Fine-PP Ball Grid Array) package.
