사양
| 속성 | 가치 |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 4Gb (256M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 19 ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
개요
Description
MT40A256M16TB-062E:G is a Micron DRAM device from the MT40A family. It is organized as 256M × 16 (i.e., 4 Gbit per die) and is used as a single DRAM component on memory modules (DIMMs, etc.). The “-062E” is the speed grade, and “-G” typically denotes a RoHS-compliant/lead-free variant. This part is a generic memory chip used in DRAM assemblies; exact electrical specs (voltage, timing, and package) depend on the MT40A256M16TB-062E:G datasheet. For precise details, consult Micron’s product datasheet.
Equivalent
Equivalents aren’t exact; MT40A256M16TB-062E:G cross-references depend on DDR type, density, width (x16), speed grade, voltage, and package. Please provide: memory type (DDR3/DDR4), total capacity (Mb/Gb), organization (256M x16), speed bin (062E), and package. With that, I can list concrete equivalents from SK hynix, Samsung, and Nanya or via Digi-Key/Mouser cross-listings.
Features
MT40A256M16TB-062E:G is a Micron DDR3L SDRAM device. Key features:
- Type/organization: DDR3L SDRAM, unbuffered, 256M x 16 (4 Gbit per die)
- Speed: Up to 1600 MT/s (DDR3-12800)
- Banks: 8 banks, Burst Length 8
- Voltage: 1.35V (DDR3L) with 1.5V compatibility
- Temperature: Extended temperature grade (-40°C to 85°C)
- Package: Typical 96-ball FCBGA
- Compliance: RoHS/lead-free
Note: exact timing parameters (tAA, tRCD, CL) vary by grade; consult the datasheet for precise figures.
- Type/organization: DDR3L SDRAM, unbuffered, 256M x 16 (4 Gbit per die)
- Speed: Up to 1600 MT/s (DDR3-12800)
- Banks: 8 banks, Burst Length 8
- Voltage: 1.35V (DDR3L) with 1.5V compatibility
- Temperature: Extended temperature grade (-40°C to 85°C)
- Package: Typical 96-ball FCBGA
- Compliance: RoHS/lead-free
Note: exact timing parameters (tAA, tRCD, CL) vary by grade; consult the datasheet for precise figures.
Pinout
- Pin count: 96-ball FBGA (96 pins)
- Function: DDR3 SDRAM memory device (density 4 Gb per die: 256M × 16), non-ECC, x16 data width.
- Function: DDR3 SDRAM memory device (density 4 Gb per die: 256M × 16), non-ECC, x16 data width.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, SSDs), headquartered in Boise, Idaho.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, SSDs), headquartered in Boise, Idaho.
Application
MT40A256M16TB-062E:G is a Micron DDR3 SDRAM device (4 Gbit, x16). Typical application areas:
- DIMMs/SODIMMs for desktops, laptops, workstations
- Server and enterprise memory modules (storage controllers, networking gear)
- Embedded/industrial systems requiring DDR3 memory (industrial PCs, telecom equipment, digital signage)
It’s used as a high-density component in DDR3 memory modules to build larger memory configurations in compatible systems.
- DIMMs/SODIMMs for desktops, laptops, workstations
- Server and enterprise memory modules (storage controllers, networking gear)
- Embedded/industrial systems requiring DDR3 memory (industrial PCs, telecom equipment, digital signage)
It’s used as a high-density component in DDR3 memory modules to build larger memory configurations in compatible systems.
Package
Fine-pitch FBGA package: 96-ball (FBGA-96), typically 8×13 mm.
