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MT40A2G8AG-062E:F
+BOMMT40A2G8AG-062E:F
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제조업체Alliance Memory, 주식회사.
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제조업체 부품 #MT40A2G8AG-062E:F
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사양
| 속성 | 가치 |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 16Gbit |
| Memory Organization | 2G x 8 |
| Operating Temperature | 0°C ~ 95°C |
| Mounting Type | Surface Mount |
| Package / Case | 78-TFBGA |
| Supplier Device Package | 78-FBGA (7.5x11) |
| Clock Frequency | 1.6 GHz |
개요
Description
Key features of the MT40A2G8AG-062E:F include a data rate of DDR4-2400, offering a balance between speed and power consumption. It supports high-speed data transfer rates and operates at a voltage of 1.2V, making it energy efficient compared to previous DDR versions. The module features an 8-bit prefetch architecture, enhancing its ability to handle large volumes of data efficiently.
Additionally, the MT40A2G8AG-062E:F supports various features for reliability and performance, including on-die termination, bank group architecture, and various power-saving modes. It is built using advanced fabrication techniques that ensure durability and performance in demanding environments.
Equivalent
1. Samsung K4A8G085WC-BCTD
2. SK Hynix H5AN8G8NCJR-UHC
3. Kingston D27RC8D2PF1Q0
These chips offer similar specifications and performance characteristics, making them suitable alternatives for applications requiring DDR4 memory solutions. Always ensure compatibility with your specific requirements and system architecture.
Features
1. Capacity: The component offers a capacity of 16Gb (Gigabits).
2. Data Rate: Supports high-speed data transfer rates, typically up to 3200 MT/s (megatransfers per second).
3. Voltage: Operates at a low voltage of 1.2V, which helps reduce power consumption.
4. Configuration: It features an x8 organization, meaning 8 data bits per memory cell.
5. Package: Comes in a compact FBGA (Fine-pitch Ball Grid Array) package, which is suitable for space-constrained applications.
6. Temperature Range: Designed to operate efficiently within a wide temperature range, supporting both commercial and industrial applications.
7. Reliability: Incorporates features for improved signal integrity and reliability, such as On-Die Termination (ODT) and Data Bus Inversion (DBI).
These features make the MT40A2G8AG-062E:F suitable for various applications, including computing, networking, and consumer electronics, where performance and power efficiency are crucial.
Pinout
The primary function of this DDR4 SDRAM is to provide high-speed data storage and retrieval for computing devices. It is used in a variety of applications including servers, desktops, laptops, and other digital devices requiring large memory capacity and fast access times.
Key features include:
- High data transfer rates, supporting bandwidths of up to 2400 MT/s
- Low operating voltage, typically around 1.2V for power efficiency
- Multiple internal banks for improved performance
- Support for features like bank groups, burst lengths, and write leveling, contributing to its efficiency and speed.
This memory chip is designed to work in conjunction with a memory controller that handles addresses, command signals, and data I/O operations.
Manufacturer
Micron is known for its innovation in memory technology and its contributions to advancements in computing performance. The company plays a significant role in the electronics supply chain and serves a diverse set of industries, including consumer electronics, telecommunications, automotive, and data centers. Its products are used in applications ranging from personal computers and smartphones to cloud infrastructure and enterprise-level storage solutions.