사양
| 속성 | 가치 |
| Supplier | Micron Technology Inc. |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 667 MHz |
| Access Time | 13.5 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
개요
Description
MT41K128M16HA-15E:D is a Micron DDR3 SDRAM memory device. Key points:
- Density/organization: 2 Gbit total, organized as 128M × 16 bits.
- Type: Unbuffered, multi-bank, synchronous DRAM (DDR3).
- Applications: Used in memory modules and embedded/board-level memory subsystems.
- Voltage and speed: DDR3-class device; nominal operating voltage around 1.5 V (with variants for lower voltages). The -15E denotes a specific speed grade/timing, and the :D suffix indicates a packaging/revision variant.
- Features: standard DDR3 features such as burst length, DLL, and auto-refresh (exact timings depend on the specific part revision).
For exact operating conditions, timing parameters (tRCD, tRP, tCAS), current, and package details, consult the MT41K128M16HA-15E:D datasheet from Micron.
- Density/organization: 2 Gbit total, organized as 128M × 16 bits.
- Type: Unbuffered, multi-bank, synchronous DRAM (DDR3).
- Applications: Used in memory modules and embedded/board-level memory subsystems.
- Voltage and speed: DDR3-class device; nominal operating voltage around 1.5 V (with variants for lower voltages). The -15E denotes a specific speed grade/timing, and the :D suffix indicates a packaging/revision variant.
- Features: standard DDR3 features such as burst length, DLL, and auto-refresh (exact timings depend on the specific part revision).
For exact operating conditions, timing parameters (tRCD, tRP, tCAS), current, and package details, consult the MT41K128M16HA-15E:D datasheet from Micron.
Features
MT41K128M16HA-15E:D is a Micron DDR3 SDRAM device. Key features:
- Density/organization: 2 Gb total (128M x 16)
- Interface: DDR3 SDRAM, unbuffered, 16-bit I/O per device
- Banks and prefetch: 8 banks, 8n prefetch
- Speed/voltage: JEDEC-compliant; up to 1333 MT/s data rate; nominal 1.5 V
- Power/save: supports auto refresh, partial array self-refresh, and deep power-down for lower idle power
- Temperature/packaging: designed for commercial temperature range; supplied in typical surface-mount/BGA packages used in memory modules
- Compliance: JEDEC-standard DDR3 features and timing options; suitable for use in DIMMs, SODIMMs and other multi-device configurations
Note: exact timing (CL, tRCD, tRP) and package options vary by revision and vendor implementation.
- Density/organization: 2 Gb total (128M x 16)
- Interface: DDR3 SDRAM, unbuffered, 16-bit I/O per device
- Banks and prefetch: 8 banks, 8n prefetch
- Speed/voltage: JEDEC-compliant; up to 1333 MT/s data rate; nominal 1.5 V
- Power/save: supports auto refresh, partial array self-refresh, and deep power-down for lower idle power
- Temperature/packaging: designed for commercial temperature range; supplied in typical surface-mount/BGA packages used in memory modules
- Compliance: JEDEC-standard DDR3 features and timing options; suitable for use in DIMMs, SODIMMs and other multi-device configurations
Note: exact timing (CL, tRCD, tRP) and package options vary by revision and vendor implementation.
Pinout
Pin count: 96-ball FBGA package (96 pins).
Function: Micron 2‑Gb DDR3 SDRAM device with a 16-bit data width (x16 organization), operating at ~1.5V for system memory/memory components.
Function: Micron 2‑Gb DDR3 SDRAM device with a 16-bit data width (x16 organization), operating at ~1.5V for system memory/memory components.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- Company type: American multinational semiconductor company that designs, manufactures, and markets memory and storage technologies (DRAM, NAND/NOR flash). It is one of the world's largest memory manufacturers, headquartered in Boise, Idaho.
- Company type: American multinational semiconductor company that designs, manufactures, and markets memory and storage technologies (DRAM, NAND/NOR flash). It is one of the world's largest memory manufacturers, headquartered in Boise, Idaho.
Application
- Desktop PCs, notebooks, and servers as main system memory
- Embedded systems, industrial/telecom equipment
- Networking gear (routers/switches) and storage controllers
- Graphics/video and multimedia hardware requiring large buffers
- FPGA/ASIC memory subsystems and development boards
Note: MT41K128M16HA-15E:D is a high-density SDRAM used in various DRAM subsystems and modules.
- Embedded systems, industrial/telecom equipment
- Networking gear (routers/switches) and storage controllers
- Graphics/video and multimedia hardware requiring large buffers
- FPGA/ASIC memory subsystems and development boards
Note: MT41K128M16HA-15E:D is a high-density SDRAM used in various DRAM subsystems and modules.
Package
96-ball FBGA (Fine Ball Grid Array) package.
