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MT41K256M16HA-107:E

Name: MT41K256M16HA-107:E
Rating: 4.8 (15 reviews)

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IC DRAM 4GBIT PAR 96FBGA

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제조업체 부품 #MT41K256M16HA-107:E
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사양

속성	가치
Part Status	Obsolete
Base Product Number	MT41K256M16
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3L
Memory Size	4Gbit
Memory Organization	256M x 16
Memory Interface	Parallel
Clock Frequency	933 MHz
Voltage - Supply	1.283V ~ 1.45V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package	96-TFBGA
Supplier Device Package	96-FBGA (9x14)
Packaging	Tray
Access Time	20 ns

개요

Description

The MT41K256M16HA-107:E is a DRAM memory chip manufactured by Micron Technology. It is part of the DDR3 SDRAM family, known for its high-speed data transfer capabilities and efficiency. This specific model features a 256 Megabit density organized as 16M x 16 bits, making it suitable for applications requiring substantial memory bandwidth. Operating at a data rate of 1066 MT/s (megatransfers per second), it provides reliable performance for tasks demanding quick memory access.
The chip operates with a standard voltage of 1.5V, which helps in maintaining a balance between performance and power consumption. Its design includes features like programmable CAS latency, burst length, and prefetch buffer options, which enhance its flexibility and adaptability for various applications, including computing, networking, and other electronics.
The package type is FBGA (Fine-Pitch Ball Grid Array), facilitating compact design integration. It is commonly used in consumer electronics, computing devices, and networking equipment due to its robust performance and reliability.

Equivalent

The MT41K256M16HA-107:E is a DDR3L SDRAM chip from Micron. Equivalent products include the H5TQ4G63AFR from SK Hynix and the K4B4G1646D from Samsung, among others. These chips share similar specifications, such as the 256M x 16 configuration, DDR3L technology, and operating speed. Always verify specifications and compatibility with your system requirements when considering alternatives.

Features

The MT41K256M16HA-107:E is a DRAM component from Micron's DDR3L SDRAM lineup. This memory chip offers several key features:
1. Density and Organization: It has a density of 4 Gb and is organized as 256M x 16 bits.
2. Speed and Performance: The "-107:E" indicates a clock speed of up to 933 MHz (1866 MT/s), offering high-speed data transfer rates. This makes it suitable for applications requiring fast and efficient memory performance.
3. Voltage: Operates at a low voltage of 1.35V (DDR3L standard) but is backward compatible with 1.5V systems.
4. Bank Architecture: It features an 8-bank design, which allows for efficient memory management and access.
5. Support for Features: Includes support for self-refresh, auto-refresh, and deep power-down modes, facilitating power efficiency.
6. Temperature Range: Typically supports standard and extended temperature ranges, making it versatile for various environmental conditions.
Designed for use in applications like desktops, laptops, and servers, it balances power consumption with performance.

Pinout

The MT41K256M16HA-107:E is a DRAM chip from the DDR3L SDRAM family, specifically a 4Gb (Gigabit) component. It typically features a 96-ball FBGA (Fine-pitch Ball Grid Array) package. The "256M16" in the part number indicates the configuration of 256 Meg x 16.
Regarding its function, this DRAM chip is used for high-speed data storage and retrieval, which is crucial for applications requiring quick access to large amounts of data, such as computers, servers, and other electronic devices. It operates with a supply voltage of 1.35V, which is indicative of the low-voltage DDR3L category, providing energy efficiency while maintaining high performance. The "-107" denotes a speed grade with a maximum data rate of 933 MHz, corresponding to a DDR3-1866 data rate.
For precise pin count details and pin functions, referring to the manufacturer's datasheet or product specifications is recommended, as they provide comprehensive pin descriptions, including the role of each pin in addressing, control, power, and ground functions.

Manufacturer

The MT41K256M16HA-107:E is manufactured by Micron Technology, Inc. Micron is a leading American company in the semiconductor industry, specializing in the production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and manufactures a wide range of semiconductor devices, including dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). These products are used in various applications, from personal computing and mobile devices to data centers and automotive systems. Micron is known for its innovation in memory technology and plays a critical role in advancing semiconductor capabilities globally.

Application

The MT41K256M16HA-107:E is a DRAM (Dynamic Random-Access Memory) chip commonly used in applications that require high-speed, volatile memory. Its primary application areas include:
1. Computing Systems: Used in desktops, laptops, and servers for efficient data processing and multitasking.
2. Consumer Electronics: Found in gaming consoles, smart TVs, and set-top boxes for enhanced performance.
3. Networking Equipment: Utilized in routers and switches to handle large data packets and improve throughput.
4. Embedded Systems: Employed in industrial control systems and automotive applications for real-time data processing.
5. Mobile Devices: Integrated into smartphones and tablets to support fast memory access and smooth user experiences.
These applications leverage the DRAM's speed, capacity, and reliability.

Package

The MT41K256M16HA-107:E is a DRAM component from Micron, specifically a 4Gb DDR3L SDRAM. Its package type is a 96-ball FBGA (Fine-pitch Ball Grid Array).

Frequently Asked Questions

Q: What is the memory density and organization of the MT41K256M16HA-107:E?
A: It has a 4Gbit density with a 256M x 16 organization, ideal for high-bandwidth data processing.

Q: What voltage range does this DDR3L SDRAM require?
A: It operates at 1.283V to 1.45V, supporting low-power DDR3L standards for energy-efficient designs.

Q: Is this component suitable for new designs since it is marked as Obsolete?
A: No, the Obsolete status indicates it is not recommended for new designs; use for legacy system repairs only.

Q: What is the maximum clock frequency and access time supported?
A: It supports up to 933 MHz clock frequency with a 20 ns access time for fast data retrieval.

Q: Can this memory operate under high-temperature industrial environments?
A: Yes, it has an operating temperature range of 0°C to 95°C (TC), suitable for some commercial or extended-temperature applications.

Q: What is the package type and mounting style for this DRAM?
A: It comes in a 96-TFBGA surface mount package, with a 96-FBGA (9x14) supplier device package.

Q: Is the memory interface parallel or serial, and what format does it use?
A: It uses a parallel memory interface in DDR3L SDRAM format, ensuring high-speed data transfer.

Q: What packaging option is available for procurement?
A: It is typically supplied in Tray packaging, suitable for automated assembly lines.