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MT41K512M8DA-107:P
+BOMIC DRAM 4GBIT PAR 78FBGA
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제조업체 부품 #MT41K512M8DA-107:P
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사양
| 속성 | 가치 |
| Part Status | Active |
| Base Product Number | MT41K512M8 |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 78-TFBGA |
| Supplier Device Package | 78-FBGA (8x10.5) |
| Packaging | Tray |
| Access Time | 20 ns |
개요
Description
The "107:P" in the part number indicates specific attributes related to the speed grade and package type. The chip supports data rates up to 1866 MT/s (megatransfers per second), which is ideal for applications requiring quick data processing capabilities. The "FBGA" (Fine-pitch Ball Grid Array) package provides a compact form factor, enhancing thermal performance and reliability.
This DRAM ensures efficient power consumption with advanced features like auto-refresh and self-refresh. It is designed to be compatible with standard DDR3 interfaces, facilitating seamless integration into existing systems. Overall, the MT41K512M8DA-107:P is a versatile and robust choice for modern memory applications.
Equivalent
1. Samsung K4B4G0846D - 4Gb DDR3L SDRAM.
2. Hynix H5TC4G63AFR - 4Gb DDR3L SDRAM.
3. Nanya NT5CB512M8DN - 4Gb DDR3L SDRAM.
4. Kingston D3L4G64 - 4Gb DDR3L SDRAM modules.
These alternatives typically share similar specifications in terms of capacity, speed, and voltage. Always check compatibility with specific requirements.
Features
1. Density and Organization: It is organized as 512 Meg x 8 bits, offering a total density of 4Gb (gigabits).
2. Speed and Performance: Operates at speeds up to 1866 MT/s (million transfers per second), providing fast data transfer.
3. Voltage: Supports low voltage operation at 1.35V, which is more power-efficient, but it is also compatible with 1.5V operation.
4. Package: Available in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package, which offers efficient space usage and heat dissipation.
5. Data Rate and Latency: Features a timing of 107 cycles and offers various CAS latency options to optimize performance.
6. Reliability: Includes features like on-die termination and data masking for improved signal integrity and reliability.
7. Applications: Suitable for use in applications such as computing systems, networking devices, and consumer electronics where efficient memory performance is required.
These features make it a versatile choice for systems requiring moderate power consumption with high-speed data processing.
Pinout
The MT41K512M8DA-107:P comes in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. The primary functions of the pins include:
1. Data I/O Pins (DQ): Handles the read and write data.
2. Address Pins (A0-A15): Used to select the memory addresses.
3. Bank Address Pins (BA0-BA2): Selects the bank to be activated.
4. Command Pins (RAS, CAS, WE): Row and column address strobe and write enable signals for controlling the access mode.
5. Clock (CK, CK#): Differential clock signals for synchronizing read/write operations.
6. Control Pins (CS#, CKE, ODT): Chip Select, Clock Enable, and On-Die Termination control.
7. Power and Ground Pins (VDD, VSS): Provide power supply and grounding.
This chip supports high-speed data rates up to 1866 MT/s and operates at a supply voltage of 1.35V.
Manufacturer
Application
1. Computing: Enhances performance in PCs, laptops, and servers by providing efficient memory management and fast data access.
2. Networking Equipment: Supports routers, switches, and other networking devices with large data handling and quick processing capabilities.
3. Consumer Electronics: Powers memory-intensive applications in gaming consoles, smart TVs, and high-end smartphones.
4. Embedded Systems: Used in industrial controls, automotive systems, and IoT devices for reliable and efficient memory operations.
5. Telecommunications: Supports infrastructure like base stations and data centers with robust memory solutions.
Package
Frequently Asked Questions
Q: What is the memory density and organization of the MT41K512M8DA-107:P?
A: It is a 4Gbit DDR3L SDRAM organized as 512M x 8, optimized for high-density memory applications.
Q: What voltage range does this DDR3L component support?
A: It operates at 1.283V to 1.45V, compliant with DDR3L low-voltage standards for power efficiency.
Q: What is the maximum clock frequency and access time?
A: It supports a 933 MHz clock frequency with a 20 ns access time, enabling high-speed data transfers.
Q: What package type and mounting style does it use?
A: It comes in a 78-TFBGA package (78-FBGA 8x10.5mm) for surface mount assembly, suitable for compact designs.
Q: What is the operating temperature range for this memory?
A: The rated temperature range is 0°C to 95°C (TC), appropriate for commercial and industrial environments.
Q: Does this part support parallel or serial memory interface?
A: It uses a parallel memory interface, standard for SDRAM - DDR3L architectures.
Q: Is this component currently active and readily available?
A: Yes, its Part Status is Active, indicating ongoing production and supply chain support.