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MT46V16M16CY-5B:M

Name: MT46V16M16CY-5B:M
Rating: 4.8 (15 reviews)

+BOM

IC DRAM 256MBIT PARALLEL 60FBGA

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제조업체 부품 #MT46V16M16CY-5B:M
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사양

속성	가치
Part Status	Obsolete
Base Product Number	MT46V16M16
Digi Key Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR
Memory Size	256Mbit
Memory Organization	16M x 16
Memory Interface	Parallel
Clock Frequency	200 MHz
Write Cycle Time - Word, Page	15ns
Voltage - Supply	2.5V ~ 2.7V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	60-TFBGA
Supplier Device Package	60-FBGA (8x12.5)
Packaging	Bulk
Access Time	700 ps

개요

Description

The MT46V16M16CY-5B is a DRAM (Dynamic Random Access Memory) chip manufactured by Micron Technology. Specifically, it is a 256 Megabit (Mb) DDR SDRAM (Double Data Rate Synchronous Dynamic RAM) device organized as 16 Megabytes x 16 bits. This memory chip operates at a 5 ns (nanosecond) cycle time, making it suitable for high-speed applications.
Key features include:
- Density: 256 Mb (32 MB total).
- Interface: DDR SDRAM, allowing for data transfer on both the rising and falling edges of the clock cycle.
- Voltage: Typically operates at 2.5V, compatible with modern digital systems.
- Package Type: Often available in a compact BGA (Ball Grid Array) format, facilitating high-density designs.
The MT46V16M16CY-5B is ideal for use in consumer electronics, networking equipment, and other applications requiring efficient and fast memory solutions.

Equivalent

The MT46V16M16CY-5B:M is a DRAM chip with specific characteristics. Equivalent products include:
1. K4S641632H (Samsung)
2. HY57V281620 (Hynix)
3. NT5SD256M16D1 (Nanya)
4. IS46/IS46/IS62 (Integrated Silicon Solution)
Ensure compatibility with your specific application before substitution, as variations in timings or voltages may exist.

Features

The MT46V16M16CY-5B is a DRAM (Dynamic Random Access Memory) chip from Micron Technology. Key features include:
1. Memory Type: 256Mb SDRAM, organized as 16M x 16.
2. Speed Grade: Operating at a clock speed of 5 ns (200 MHz).
3. Voltage: Typically operates at 2.5V.
4. Package Type: Offered in a 54-pin TSOP II package, suitable for surface mount applications.
5. Functionality: Supports burst mode and single data rate operations, enhancing performance for applications requiring fast data access.
6. Data Rate: Capable of delivering high data bandwidth, making it suitable for various consumer and industrial applications.
7. Low Power: Designed for energy efficiency, contributing to reduced overall power consumption.
8. Refresh: Requires periodic refresh cycles to maintain data integrity.
This chip is ideal for use in computer systems, networking equipment, and other electronic devices requiring reliable and efficient memory solutions.

Pinout

The MT46V16M16CY-5B:M is a 1Gb (16 Meg x 16) DDR2 SDRAM device from Micron Technology. It has a total of 54 pins.
### Pin Functions:
1. Address Pins (A0-A13): Used for addressing memory locations.
2. Data Pins (DQ0-DQ15): Data input/output pins for read/write operations.
3. Control Pins:
- CS (Chip Select): Activates the device.
- RAS (Row Address Strobe): Selects the row.
- CAS (Column Address Strobe): Selects the column.
- WE (Write Enable): Indicates write operations.
4. Clock Pins (CLK, CLK#): Synchronize data transfers.
5. Power Supply Pins (VDD, VSS): Provide power to the device.
6. Input/Output Control Pins (DM, DQS, DQS#): Data Mask and Data Strobe for read/write operations.
This SDRAM is designed for high-speed applications, commonly used in computing and embedded systems.

Manufacturer

The manufacturer of the MT46V16M16CY-5B:M is Micron Technology, Inc. Micron is a leading American manufacturer of semiconductor devices, particularly known for its memory and storage solutions, including DRAM (Dynamic Random-Access Memory) and NAND flash memory. Founded in 1978 and headquartered in Boise, Idaho, Micron operates globally, serving various markets such as computing, mobile, networking, automotive, and industrial applications. The company is recognized for its innovation in memory technology and plays a significant role in the development of advanced semiconductor products. Micron is publicly traded on the NASDAQ under the ticker symbol MU and is one of the major players in the semiconductor industry, competing with other large companies like Samsung, SK Hynix, and Intel.

Application

The MT46V16M16CY-5B is a DRAM memory component primarily used in various applications including consumer electronics, telecommunications, networking equipment, and industrial devices. Its high-density and fast access times make it suitable for use in smartphones, tablets, and laptops. Additionally, it is utilized in automotive electronics, embedded systems, and gaming consoles, where reliable and efficient memory performance is crucial. Its versatility also extends to data-intensive applications such as servers and storage systems, enhancing overall system performance and responsiveness.

Package

The MT46V16M16CY-5B:M is a DDR2 SDRAM memory chip, typically available in a 54-ball FBGA (Fine Ball Grid Array) package. This compact package type is designed for efficient thermal performance and space-saving in electronic applications.

Frequently Asked Questions

Q: What is the memory technology and density of the MT46V16M16CY-5B:M?
A: It is a 256Mbit DDR SDRAM organized as 16M x 16, using volatile DRAM technology.

Q: What is the maximum clock frequency and access time?
A: The device supports a 200 MHz clock frequency with a 700 ps access time, ideal for high-speed parallel interfaces.

Q: What voltage supply range does this part require?
A: It operates with a 2.5V to 2.7V supply, typical for DDR SDRAM memory modules.

Q: Is this component suitable for surface mount assembly?
A: Yes, it features a surface mount 60-TFBGA package (8x12.5mm FBGA), compatible with standard SMT processes.

Q: What is the operating temperature range for this memory IC?
A: It is rated for commercial operation from 0°C to 70°C (TA), suitable for most industrial and consumer applications.

Q: What is the write cycle time for word/page operations?
A: The write cycle time, word or page, is specified at 15ns, ensuring reliable data write performance.

Q: Is the MT46V16M16CY-5B:M obsolete or still active?
A: According to specifications, its part status is marked as "Obsolete," so it may be limited to legacy or replacement applications.