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MT46V16M16P-5B:K
+BOMDRAM
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제조업체마이크로미터
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제조업체 부품 #MT46V16M16P-5B:K
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사양
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개요
Description
Equivalent
1. Hynix: HY57V641620H
2. Samsung: K4H561638J
3. Infineon: HYB25D256160CE
4. Nanya: NT5DS16M16CS
These equivalents offer similar capacities and performance specifications. Always verify compatibility with your specific application needs.
Features
This SDRAM operates at a voltage range of 2.5V, making it suitable for various consumer and industrial applications. It is equipped with a 4-bank architecture, which enables efficient data handling and access. The MT46V16M16P-5B:K also includes standard SDRAM features such as programmable CAS latency, burst length, and burst type, providing flexibility in memory management. Its temperature range and packaging options are suitable for reliable performance in different environments. Overall, the module is designed for high-speed, reliable memory operations in systems requiring efficient data processing.
Pinout
Manufacturer
Application
1. Consumer Electronics: Devices such as digital cameras, gaming consoles, and set-top boxes.
2. Computing: Laptops, desktops, and servers for efficient multitasking and data processing.
3. Networking Equipment: Routers, switches, and other communication devices that require rapid data handling.
4. Industrial Systems: Embedded systems and automation equipment needing reliable memory performance.
5. Telecommunications: Infrastructure equipment for storing and processing large volumes of data quickly.
These applications benefit from the chip’s fast data transfer rates and low power consumption.
Package
Frequently Asked Questions
Q: What is the density and organization of this DDR memory device?
A: It is a 256Mb DDR SDRAM organized as 16M words x 16 bits (16 Meg x 16).
Q: What is the speed grade indicated by the "-5B" speed bin?
A: The -5B speed bin typically indicates a maximum clock frequency of 200 MHz (DDR400), corresponding to a data rate of 400 Mbps per pin.
Q: What is the recommended supply voltage for the MT46V16M16P-5B:K?
A: This device requires a 2.5V VDD core supply and a separate 2.5V VDDQ I/O supply for DDR signaling.
Q: What form factor does the "P" in the part number suggest?
A: The "P" typically denotes a TSOP package (66-pin TSOP-II), which is standard for this generation of DDR1 memory.
Q: Can this component be used in embedded systems requiring high bandwidth?
A: Yes, with a 16-bit data bus at DDR400, it provides a theoretical peak bandwidth of 800 MB/s, suitable for network or industrial embedded designs.
Q: Does this part support self-refresh or low-power operation?
A: Yes, it supports auto-refresh and self-refresh modes; however, it is a standard DDR (DDR1) device, not optimized for low-power mobile standards.