사양
| 속성 | 가치 |
| Supplier | Micron Technology Inc. |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 700 ps |
| Voltage - Supply | 2.5V ~ 2.7V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
개요
Description
Equivalent
MT46V32M16CY-5B:J is a Micron DDR2 SDRAM, 512 Mb total, organized 32M x 16, 1.8V, speed grade -5 (DDR2-667). Equivalents are DDR2 SDRAM devices from other vendors with the same density/width/voltage (e.g., SK hynix, Samsung, Nanya). To cross-reference, match: 512‑Mbit, x16, DDR2, 1.8V, -667 class, same tRCD/tRP/tRAS. Use datasheet cross-reference tools for exact part numbers.
Features
MT46V32M16CY-5B:J Features (highlights):
- 512 Mb Mobile DDR2 SDRAM, organized as 32M × 16
- Low-power 1.8 V core and I/O
- DDR2-400 data rate (PC2-3200)
- 4 banks; 4n prefetch; Burst length 4/8; sequential burst
- Fully synchronous operation; auto-refresh and self-refresh
- ZQ calibration; Partial Array Self-Refresh
- Pb-free, RoHS-compliant packaging; speed grade -5B (J suffix)
Note: exact temp ranges and package details are in the datasheet.
- 512 Mb Mobile DDR2 SDRAM, organized as 32M × 16
- Low-power 1.8 V core and I/O
- DDR2-400 data rate (PC2-3200)
- 4 banks; 4n prefetch; Burst length 4/8; sequential burst
- Fully synchronous operation; auto-refresh and self-refresh
- ZQ calibration; Partial Array Self-Refresh
- Pb-free, RoHS-compliant packaging; speed grade -5B (J suffix)
Note: exact temp ranges and package details are in the datasheet.
Pinout
- Pin count: 63-pin FBGA (FBGA63)
- Function: 512 Mb Mobile DDR SDRAM (32M × 16 organization) with a 16-bit data bus, used as high-speed system memory (DDR2/LPDDR-type device) in mobile applications.
- Function: 512 Mb Mobile DDR SDRAM (32M × 16 organization) with a 16-bit data bus, used as high-speed system memory (DDR2/LPDDR-type device) in mobile applications.
Manufacturer
- Manufacturer: Micron Technology, Inc. (Micron)
- What kind of company: An American multinational semiconductor company specializing in memory and storage technologies (DRAM and NAND flash), and related products; one of the world's largest memory manufacturers.
- What kind of company: An American multinational semiconductor company specializing in memory and storage technologies (DRAM and NAND flash), and related products; one of the world's largest memory manufacturers.
Application
MT46V32M16CY-5B:J is a Micron DDR SDRAM device used as high-density system memory. Typical application areas include:
- Desktop and notebook main memory (DIMM/SO-DIMM)
- Embedded and industrial equipment needing large DRAM capacity
- Networking/telecom gear, storage controllers, and edge devices
- Multimedia, graphics, and consumer electronics requiring fast memory
- Memory buffers and expansion memory for ASIC/FPGA-based systems
- Desktop and notebook main memory (DIMM/SO-DIMM)
- Embedded and industrial equipment needing large DRAM capacity
- Networking/telecom gear, storage controllers, and edge devices
- Multimedia, graphics, and consumer electronics requiring fast memory
- Memory buffers and expansion memory for ASIC/FPGA-based systems
Package
A 54-ball Fine-pitch FBGA (ball-grid array) package.
