사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 333 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 450 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
개요
Description
The MT47H64M16HW-3:H is a DRAM (Dynamic Random Access Memory) module from Micron Technology, specifically a DDR2 (Double Data Rate 2) SDRAM. It is designed to offer improved performance over previous memory technologies by doubling the data transfer rate without an increase in frequency. This module has a 64 Meg x 16-bit organization, providing a total of 1 Gigabit (Gb) storage capacity. The "HW" in the part number denotes a specific revision or version of the memory chip, while "3" represents a speed grade, indicating its maximum data rate capability. The "H" at the end signifies a RoHS-compliant lead-free package.
This memory is typically used in applications requiring high-speed data access and processing, such as computers, servers, and other electronic devices needing efficient multitasking and smooth operation. Its key features include faster data rates, lower power consumption compared to DDR1, and improved thermal performance, making it suitable for high-performance computing environments.
This memory is typically used in applications requiring high-speed data access and processing, such as computers, servers, and other electronic devices needing efficient multitasking and smooth operation. Its key features include faster data rates, lower power consumption compared to DDR1, and improved thermal performance, making it suitable for high-performance computing environments.
Equivalent
The MT47H64M16HW-3:H is a 1Gb DDR2 SDRAM chip from Micron Technology. Equivalent products from other manufacturers include:
1. Hynix H5PS1G63JFR
2. Samsung K4T1G164QE
3. Nanya NT5TU64M16GG
These chips offer similar capacities, configurations, and performance characteristics, making them suitable substitutes in compatible systems.
1. Hynix H5PS1G63JFR
2. Samsung K4T1G164QE
3. Nanya NT5TU64M16GG
These chips offer similar capacities, configurations, and performance characteristics, making them suitable substitutes in compatible systems.
Features
The MT47H64M16HW-3:H is a DRAM memory component that features several key specifications:
1. Density: It has a density of 1Gb, organized as 64M x 16 bits.
2. Speed: It operates at a clock speed of up to 333 MHz (DDR2-667).
3. Voltage: The device requires a power supply voltage of 1.8V.
4. Interface: It uses a DDR2 SDRAM interface, which is optimized for high bandwidth data transfer.
5. Package: Typically available in a 84-ball FBGA (Fine-pitch Ball Grid Array) package.
6. Data Rate: It supports a double data rate, meaning data is transferred on both the rising and falling edges of the clock signal.
7. Configuration: The memory is organized in a 4-bank structure, which helps in achieving higher data throughput.
8. Features: Includes features such as on-die termination (ODT), programmable CAS latency, burst lengths, and auto-refresh capability.
These features make the MT47H64M16HW-3:H suitable for applications requiring high-speed memory access, such as computing and networking devices.
1. Density: It has a density of 1Gb, organized as 64M x 16 bits.
2. Speed: It operates at a clock speed of up to 333 MHz (DDR2-667).
3. Voltage: The device requires a power supply voltage of 1.8V.
4. Interface: It uses a DDR2 SDRAM interface, which is optimized for high bandwidth data transfer.
5. Package: Typically available in a 84-ball FBGA (Fine-pitch Ball Grid Array) package.
6. Data Rate: It supports a double data rate, meaning data is transferred on both the rising and falling edges of the clock signal.
7. Configuration: The memory is organized in a 4-bank structure, which helps in achieving higher data throughput.
8. Features: Includes features such as on-die termination (ODT), programmable CAS latency, burst lengths, and auto-refresh capability.
These features make the MT47H64M16HW-3:H suitable for applications requiring high-speed memory access, such as computing and networking devices.
Pinout
The MT47H64M16HW-3:H is a DRAM component, specifically a DDR2 SDRAM. It has a pin count of 84, which is typical for this type of memory chip packaged in a TFBGA (Thin Fine-Pitch Ball Grid Array). This chip is organized as 64 Meg x 16, representing its configuration and density.
The primary function of this DDR2 SDRAM is to provide volatile storage with quick access times for data that needs to be rapidly available to the system's processors. It operates with a data rate of DDR2-667, meaning it can transfer data at a rate of 667 megatransfers per second. Key functions of this chip include storing data temporarily for quick access by the CPU, buffering, and providing a fast interface between the processor and other components. It is commonly used in applications requiring high-speed data processing, such as in computers, laptops, and servers.
This DDR2 SDRAM enhances system performance by providing faster data rates, reduced power consumption compared to DDR, and efficient memory management.
The primary function of this DDR2 SDRAM is to provide volatile storage with quick access times for data that needs to be rapidly available to the system's processors. It operates with a data rate of DDR2-667, meaning it can transfer data at a rate of 667 megatransfers per second. Key functions of this chip include storing data temporarily for quick access by the CPU, buffering, and providing a fast interface between the processor and other components. It is commonly used in applications requiring high-speed data processing, such as in computers, laptops, and servers.
This DDR2 SDRAM enhances system performance by providing faster data rates, reduced power consumption compared to DDR, and efficient memory management.
Manufacturer
The MT47H64M16HW-3:H is a DRAM chip manufactured by Micron Technology, Inc. Micron is a prominent American company specializing in memory and storage solutions. It produces a wide range of semiconductor devices, including dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). Micron is known for its innovation in memory and storage technologies, serving various industries such as computing, networking, automotive, and mobile devices. The company has a strong global presence and is one of the leading players in the semiconductor industry.
Application
The MT47H64M16HW-3:H is a DDR2 SDRAM memory chip commonly used in areas requiring efficient data processing and storage. Its applications include computing devices such as laptops and desktops, servers for handling large-scale data operations, networking equipment for managing data traffic, and telecommunications systems for signal processing. Additionally, it is used in consumer electronics like digital cameras and gaming consoles, automotive systems for infotainment and advanced driver assistance systems (ADAS), and industrial equipment requiring reliable memory solutions. Its high speed and low power consumption make it suitable for a wide range of applications where performance and efficiency are critical.
Package
The MT47H64M16HW-3:H is a DRAM chip from Micron Technology, specifically a 1Gb DDR2 SDRAM. The package type is FBGA (Fine-Pitch Ball Grid Array), which is commonly used in semiconductor packaging to provide a compact footprint with good pin density and performance.
