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MX25U6435FBBI-10G
+BOMIC FLASH 64MBIT SPI/QUAD 12WLCSP
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제조업체왕홍
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제조업체 부품 #MX25U6435FBBI-10G
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사양
| 속성 | 가치 |
| Series | MX25xxx35/36 - MXSMIO™ |
| PartStatus | Not For New Designs |
| BaseProductNumber | MX25U6435 |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 64Mbit |
| MemoryOrganization | 8M x 8 |
| MemoryInterface | SPI - Quad I/O |
| ClockFrequency | 104 MHz |
| WriteCycleTime-Word,Page | 30µs, 3ms |
| Voltage-Supply | 1.65V ~ 2V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 12-WLCSP |
| Packaging | Tape & Reel (TR) |
개요
Description
Equivalent
- Winbond W25Q64FVSSIG / W25Q64JVSSIG
- GigaDevice GD25Q64CSIG
- ISSI IS25LP064A
- Micron N25Q64A11
- SST SST25VF064C
- Puya P25Q64HIG
Note: voltage, speed (e.g., up to ~104 MHz), and package must match your design; check datasheets for exact similarities.
Features
- 64 Mbit (8 MB) serial NOR flash memory.
- Supply voltage: 2.7–3.6 V; industrial temperature range (-40 to 85°C).
- Interfaces: Standard SPI, Dual SPI, and Quad SPI I/O (with QPI capable modes).
- Page program: 256-byte page size. Read operations include fast/continuous reads.
- Erase architecture: 4 KB sectors; 32 KB and 64 KB blocks; chip erase option available.
- Endurance and retention: typically about 100k program/erase cycles per sector; data retention ~20 years at 25°C.
- Power and performance: Deep power-down mode; wake/reset features; high-speed read modes in supported configurations.
- Security and protection: Write Enable Latch; status and configuration registers; block protection (BP) bits; Quad Enable (QE) for quad I/O modes; WP/HOLD control pins.
Note: Exact timings and supported mode sets vary by device revision and configuration.
Pinout
- Function: 64-Mbit serial NOR flash memory with SPI interface. Key pins: VCC, GND, CS (active low), SCK, SI (data in/MOSI), SO (data out/MISO), WP (write protect), HOLD (pause). Used for non-volatile storage in embedded systems.
Manufacturer
- What kind of company: A Taiwanese semiconductor company that designs and manufactures non-volatile memory products (NOR/NAND flash, EEPROM, and related memory ICs).
Application
- Boot memory and firmware storage for microcontrollers and SoCs
- Firmware updates and OTA staging in IoT and consumer electronics
- External non-volatile storage for code, LUTs/calibration data
- Automotive ECUs and instrument clusters
- Networking/telecom equipment and industrial controllers
- FPGA/ASIC configuration bitstreams
- Data logging and parameter storage
- Secure storage for keys/credentials (with built-in security features)
Concise, reliable external flash for code and data in diverse devices.
Package
Frequently Asked Questions
Q: What is the memory density of the MX25U6435FBBI-10G?
A: It has a 64Mbit (8M x 8) capacity, suitable for code shadowing and data storage in embedded systems.
Q: Does this chip support high-speed SPI operation?
A: Yes, it supports a clock frequency up to 104 MHz in Quad I/O mode, enabling fast data transfer for NOR flash.
Q: What voltage range does this flash memory require?
A: It operates from 1.65V to 2V, making it ideal for low-power and battery-operated designs.
Q: What is the typical write cycle time per page?
A: The page write time is approximately 3ms, with a word write cycle of 30μs, ensuring efficient programming.
Q: Is this component suitable for industrial temperature ranges?
A: Yes, it operates from -40°C to 85°C, covering standard industrial and commercial applications.
Q: What package type is available for the MX25U6435FBBI-10G?
A: It comes in a 12-ball WLCSP (Wafer-Level Chip Scale Package) for space-constrained designs.
Q: Can this memory be used for reliable code execution?
A: Yes, as a NOR Flash with Quad SPI interface, it supports fast random read for execute-in-place (XIP) applications.
