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MX29GL640EHXFI-70G
+BOMIC FLASH 64MBIT PARALLEL 64LFBGA
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제조업체왕홍
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제조업체 부품 #MX29GL640EHXFI-70G
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사양
| 속성 | 가치 |
| Series | MX29GL |
| PartStatus | Active |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 64Mbit |
| MemoryOrganization | 8M x 8 |
| MemoryInterface | Parallel |
| WriteCycleTime-Word,Page | 70ns |
| AccessTime | 70 ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 64-LBGA, CSPBGA |
| SupplierDevicePackage | 64-LFBGA, CSP (11x13) |
| BaseProductNumber | MX29GL640 |
개요
Description
Key features include:
1. Access Speed: With a maximum access time of 70ns, it supports efficient read operations.
2. Interface: Utilizes a standard parallel interface for simple integration with microcontrollers and processors.
3. Endurance and Reliability: Supports a high number of program/erase cycles (typically 100,000 cycles), ensuring long-term reliability.
4. Data Retention: Offers excellent data retention capabilities, typically ensuring data integrity for up to 20 years under specified conditions.
5. Sector Architecture: Organized into multiple sectors, enabling flexible data management and partial updates.
The MX29GL640EHXFI-70G is widely used in applications like automotive controls, industrial devices, and consumer electronics, making it a versatile choice for developers.
Equivalent
1. W25Q64FV - Winbond
2. S29GL064N - Cypress
3. M29W640FB - STMicroelectronics
4. AT45DB641E - Microchip (though slightly different architecture)
Always check specific features and compatibility for your application before substituting.
Features
1. Memory Type: NOR Flash, suitable for code storage and execution.
2. Access Speed: Offers a maximum access speed of 70ns, facilitating quick read operations.
3. Voltage Range: Operates on a supply voltage of 2.7V to 3.6V, ensuring compatibility with various systems.
4. Interface: Supports a parallel interface, making it easy to integrate with microcontrollers and other devices.
5. Programming and Erase: Features a sector erase capability, allowing for efficient memory management; supports multiple programming modes.
6. Endurance: Approximately 100,000 program/erase cycles per sector, providing durability for frequent updates.
7. Data Retention: Guarantees a data retention period of up to 20 years.
8. Packaging: Available in a variety of packages, including TSOP and the smaller BGA form factors.
These features make the MX29GL640EHXFI-70G suitable for applications in consumer electronics, automotive, and industrial sectors.
Pinout
Pin Count: 48 pins
Functions of Key Pins:
- A0-A20: Address input pins used to select memory locations.
- DQ0-DQ7: Data input/output pins for reading/writing data.
- CE# (Chip Enable): Activates the chip for read/write operations.
- OE# (Output Enable): Controls output data during read operations.
- WE# (Write Enable): Activates writing operations.
- RP# (Reset): Resets the chip.
- VCC: Power supply pin.
- GND: Ground reference pin.
This device supports various features including sector erase and byte/word programming, making it suitable for a wide range of applications such as embedded systems and consumer electronics.
Manufacturer
The MX29GL640EHXFI-70G is a 64Mb NOR flash memory device, often used for code storage in embedded systems and applications requiring reliable, high-speed memory access. Macronix focuses on innovation and quality in its semiconductor products, catering to the growing demands for memory solutions in various technological advancements.