사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Gb (256M x 4) |
| Memory Interface | SPI |
| Clock Frequency | 108 MHz |
| Write Cycle Time - Word Page | 8ms, 5ms |
| Voltage - Supply | 1.7V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
개요
Description
The N25Q00AA11G1240E is a 1Gb (gigabit) Serial NOR Flash memory device manufactured by Micron Technology. It is part of the N25Q series and is designed for high-performance, low-power applications. This memory is typically used in embedded systems and consumer electronics due to its reliability and efficiency.
Key features include:
1. Memory Architecture: Organized as 128M x 8 bits, providing a total of 1Gb storage capacity.
2. Interface: Utilizes a Serial Peripheral Interface (SPI) for communication, supporting single, dual, and quad I/O modes to enhance data transfer rates.
3. Performance: Offers fast read speeds and low latency, making it suitable for applications requiring quick data access.
4. Low Power Consumption: Designed to operate with low power, which is ideal for battery-powered devices.
5. Endurance and Data Retention: Provides high endurance with a long data retention period, ensuring data integrity over time.
6. Package Options: Available in various package options to suit different design requirements.
This device is widely used in applications such as firmware storage, code shadowing, and data logging.
Key features include:
1. Memory Architecture: Organized as 128M x 8 bits, providing a total of 1Gb storage capacity.
2. Interface: Utilizes a Serial Peripheral Interface (SPI) for communication, supporting single, dual, and quad I/O modes to enhance data transfer rates.
3. Performance: Offers fast read speeds and low latency, making it suitable for applications requiring quick data access.
4. Low Power Consumption: Designed to operate with low power, which is ideal for battery-powered devices.
5. Endurance and Data Retention: Provides high endurance with a long data retention period, ensuring data integrity over time.
6. Package Options: Available in various package options to suit different design requirements.
This device is widely used in applications such as firmware storage, code shadowing, and data logging.
Equivalent
The Micron N25Q00AA11G1240E is a 1Gb serial NOR Flash memory chip. Equivalent products from other manufacturers include the Winbond W25Q80DV, Macronix MX25L8006E, and Spansion/Cypress S25FL008K. These alternatives offer similar storage capacities and operate with SPI interfaces, making them suitable substitutes for applications requiring serial NOR Flash memory. When selecting an equivalent, ensure compatibility with your specific application requirements, such as voltage range and temperature tolerance.
Features
The N25Q00AA11G1240E is a 1 Gb (gigabit) serial NOR Flash memory chip, commonly used for data storage in various electronic devices. Here are some key features:
1. Memory Organization: It has a memory organization of 128 MB (megabytes), separated into 64K sectors and 4K subsectors for efficient data management.
2. Interface: Utilizes a Quad SPI (Serial Peripheral Interface), allowing for faster data transfer rates and enhanced performance.
3. Voltage Range: Operates at a voltage range of 2.7V to 3.6V, making it suitable for a wide range of applications.
4. Performance: Offers fast read and write speeds with support for Dual I/O and Quad I/O operations, enhancing data throughput.
5. Security Features: Includes features like block protection, OTP (One-Time Programmable) memory, and hardware/software write protection to enhance data security.
6. Endurance and Retention: Provides high endurance with up to 100,000 program/erase cycles and data retention of up to 20 years.
7. Package: Available in various packaging options, including SOIC and WSON, to fit different design requirements.
These features make it a reliable choice for applications requiring robust and efficient non-volatile memory storage.
1. Memory Organization: It has a memory organization of 128 MB (megabytes), separated into 64K sectors and 4K subsectors for efficient data management.
2. Interface: Utilizes a Quad SPI (Serial Peripheral Interface), allowing for faster data transfer rates and enhanced performance.
3. Voltage Range: Operates at a voltage range of 2.7V to 3.6V, making it suitable for a wide range of applications.
4. Performance: Offers fast read and write speeds with support for Dual I/O and Quad I/O operations, enhancing data throughput.
5. Security Features: Includes features like block protection, OTP (One-Time Programmable) memory, and hardware/software write protection to enhance data security.
6. Endurance and Retention: Provides high endurance with up to 100,000 program/erase cycles and data retention of up to 20 years.
7. Package: Available in various packaging options, including SOIC and WSON, to fit different design requirements.
These features make it a reliable choice for applications requiring robust and efficient non-volatile memory storage.
Pinout
The N25Q00AA11G1240E is a 1 Gb (128 MB) serial NOR Flash memory device manufactured by Micron. It follows the industry-standard Serial Peripheral Interface (SPI) protocol. This device typically comes in a multi-pin package, such as a 16-pin SOP or 8-pad WSON, though the exact package type should be confirmed in the datasheet for pin count.
The pins generally include the following functions:
- CS# (Chip Select): Enables the device.
- SCK (Serial Clock): Provides clock pulses to synchronize data transfer.
- DQ0/DQ1/DQ2/DQ3 (Data I/O): Bidirectional data lines for input/output.
- WP# (Write Protect): Optionally used to protect certain blocks from being written.
- HOLD# (or RESET#): Used to pause serial communication or reset the device.
- VCC: Power supply.
- VSS: Ground.
These functions enable the device to store and retrieve data efficiently. Always consult the manufacturer's datasheet for precise pin count and configuration specific to your package type.
The pins generally include the following functions:
- CS# (Chip Select): Enables the device.
- SCK (Serial Clock): Provides clock pulses to synchronize data transfer.
- DQ0/DQ1/DQ2/DQ3 (Data I/O): Bidirectional data lines for input/output.
- WP# (Write Protect): Optionally used to protect certain blocks from being written.
- HOLD# (or RESET#): Used to pause serial communication or reset the device.
- VCC: Power supply.
- VSS: Ground.
These functions enable the device to store and retrieve data efficiently. Always consult the manufacturer's datasheet for precise pin count and configuration specific to your package type.
Manufacturer
The N25Q00AA11G1240E is manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, primarily dynamic random-access memory (DRAM), flash memory, and solid-state drives (SSDs). It is one of the leading memory manufacturers globally and serves various industries, including computing, consumer electronics, telecommunications, and automotive. Micron is known for its innovation in memory and storage solutions, helping drive advancements in technology across multiple sectors.
Application
The N25Q00AA11G1240E is a 1Gb serial NOR Flash memory chip. Its application areas typically include data storage solutions in various electronic devices. Common uses are in embedded systems, where reliable non-volatile memory is required. This can include applications in consumer electronics, automotive systems, industrial control systems, networking devices, and medical equipment. The chip's design supports features like fast read speeds and low power consumption, making it suitable for devices that require efficient memory solutions with extended data retention and endurance. Additionally, its compact size and serial interface make it ideal for space-constrained applications that require scalable and flexible memory options.
Package
The N25Q00AA11G1240E is a memory package type. Specifically, it is a serial NOR Flash memory component in a WSON (Wafer-Level Small Outline No-Lead) package, which is a compact and space-efficient design, suitable for applications requiring high-density storage with minimal space utilization.