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N25Q128A11EF840E
+BOMIC FLASH 128MBIT SPI 8VDFPN
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제조업체 부품 #N25Q128A11EF840E
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재고5622
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사양
| 속성 | 가치 |
| Part Status | Obsolete |
| Base Product Number | N25Q128A11 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 32M x 4 |
| Memory Interface | SPI |
| Clock Frequency | 108 MHz |
| Write Cycle Time - Word, Page | 8ms, 5ms |
| Voltage - Supply | 1.7V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 8-VDFN Exposed Pad |
| Supplier Device Package | 8-VDFPN (MLP8) (8x6) |
| Packaging | Tray |
개요
Description
Key features of the N25Q128A11EF840E include a fast read performance with clock frequencies up to 108 MHz and support for Dual and Quad I/O operations, which enhance data transfer rates. It also offers a wide operating voltage range, typically from 2.7 to 3.6V, making it versatile for various electronic applications. The device includes advanced security features like sector/block protect and hardware-based write protection to safeguard data integrity.
This flash memory is suitable for use in consumer electronics, industrial applications, and other devices needing reliable data storage solutions with fast access times.
Equivalent
Features
Key features include:
1. Memory Organization: It is organized in sectors and blocks, allowing for flexible and efficient data management.
2. Performance: Offers fast read, program, and erase operations. The quad I/O mode significantly boosts data transfer rates.
3. Security: Includes features like password protection and block protection to safeguard data.
4. Endurance and Data Retention: Typically supports over 100,000 program/erase cycles and has data retention of more than 20 years.
5. Low Power Consumption: Optimized for low power use, making it suitable for battery-operated devices.
6. Packaging: Available in various compact packages suitable for space-constrained applications.
This flash memory is ideal for applications requiring reliable, high-speed data storage and retrieval in embedded systems.
Pinout
1. CS# (Chip Select): Activates the device when low.
2. SCK (Serial Clock): Provides the clock signal for data transfers.
3. DQ0 (Data Input/Output 0): Used for data input and output.
4. DQ1 (Data Input/Output 1): Used for data input and output.
5. VCC (Supply Voltage): Powers the device, typically at 2.7V to 3.6V.
6. HOLD#/DQ3: Temporarily holds the device, or can be used as Data Input/Output 3 in Quad mode.
7. DQ2/W#/VPP: Acts as Write Protect, or Data Input/Output 2 in Quad mode, or for higher voltage programming.
8. VSS (Ground): Ground reference for the power supply.
These pins are used for operations such as reading, writing, and erasing the memory. The device supports standard, dual, and quad SPI protocols, providing flexibility for various applications.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the operating voltage range for this NOR Flash memory?
A: It requires a supply voltage between 1.7V and 2.0V, making it suitable for low-power applications.
Q: What is the maximum clock frequency supported by the SPI interface?
A: The device supports a maximum SPI clock frequency of 108 MHz, enabling high-speed data transfer.
Q: Is this component suitable for surface-mount assembly?
A: Yes, it is designed for surface mount mounting, specifically in an 8-VDFN exposed pad package (MLP8).
Q: What is the memory organization and total density of this device?
A: It has a total memory size of 128 Mbit, organized as 32M x 4 bits (four I/O lines).
Q: What are the typical write cycle times for this Flash memory?
A: The typical write time is 8ms per page and 5ms per word operation.
Q: In what temperature range can this component reliably operate?
A: It operates over an industrial temperature range of -40°C to +85°C (TA).