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NAND128W3A2BN6E

Name: NAND128W3A2BN6E
Rating: 4.8 (15 reviews)

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IC FLASH 128MBIT PARALLEL 48TSOP

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제조업체 부품 #NAND128W3A2BN6E
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사양

속성	가치
Part Status	Obsolete
Base Product Number	NAND128
Digi Key Programmable	Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND
Memory Size	128Mbit
Memory Organization	16M x 8
Memory Interface	Parallel
Write Cycle Time - Word, Page	50ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	48-TSOP
Packaging	Tray
Access Time	50 ns

개요

Description

The NAND128W3A2BN6E is a NAND Flash memory device, typically used in various electronic applications for data storage. It is produced by STMicroelectronics and is part of their NAND Flash memory line. This particular model offers a storage capacity of 128Mb (megabits) and is organized into blocks and pages to optimize data storage and retrieval efficiency.
Key features of the NAND128W3A2BN6E include a compact design, low power consumption, and high-speed data access, making it suitable for portable and embedded systems. It operates using a multiplexed I/O interface to reduce the number of pins required, thus simplifying design integration. The device supports common NAND Flash operations like program, read, and erase commands.
In terms of reliability, it includes error correction code (ECC) capabilities to manage data integrity and mitigate errors during data transmission. This makes it particularly useful in environments where data reliability is critical. Overall, the NAND128W3A2BN6E is designed to provide efficient, reliable, and high-capacity storage solutions for a wide range of applications.

Equivalent

The NAND128W3A2BN6E is a NAND Flash memory chip manufactured by STMicroelectronics. Equivalent products typically include NAND Flash chips with similar storage capacities, interface types, and package formats from other manufacturers. Examples include the MT29F1G08ABADAWP from Micron, the K9F1G08U0D from Samsung, and the TC58NVG0S3ETA00 from Toshiba. It is important to verify compatibility based on specific device requirements, such as voltage levels and timing specifications, when considering substitutes.

Features

The NAND128W3A2BN6E is a NAND flash memory device with the following key features:
1. Memory Capacity: 128 Megabit (16 Megabyte).
2. Architecture: Organized in a 528-byte page size with 32 pages per block, which totals 4096 blocks.
3. Voltage Range: Operates at a supply voltage of 2.7V to 3.6V.
4. Interface: Utilizes a multiplexed address/data bus for I/O operations.
5. Performance: Fast read and program times with a typical page program time of 200 microseconds and read access time of 25 microseconds.
6. Endurance: High endurance with 100,000 program/erase cycles.
7. Data Retention: Offers data retention for 10 years.
8. Error Management: Integrated hardware ECC (Error Correction Code) to ensure data integrity.
9. Package Type: Available in a 48-pin TSOP (Thin Small Outline Package).
10. Temperature Range: Supports industrial operating temperature ranges from -40°C to +85°C.
These features make it suitable for use in a variety of industrial and consumer applications where reliable storage is needed.

Pinout

The NAND128W3A2BN6E is a NAND flash memory chip with a total of 63 pins. It is specifically designed for storage applications. The primary function of this chip is to store data in a non-volatile manner, which means it retains the data even when power is removed. This chip is often used in various electronic devices, such as smartphones, tablets, and other portable devices, due to its efficient data storage capabilities.
The pins on the NAND128W3A2BN6E serve various functions including power supply, data input/output, command input, address input, and control signals. The exact pin assignments and their detailed functions can be found in the manufacturer's datasheet, which provides comprehensive information on how to interface and use the chip in different applications. Understanding the pin configuration is crucial for integrating the NAND flash memory into a circuit or system effectively.

Manufacturer

The NAND128W3A2BN6E is a NAND Flash memory chip manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, including dynamic random-access memory (DRAM), NAND flash memory, and other solid-state drives. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the leading companies in the semiconductor industry. It provides memory and storage solutions for a wide range of applications, including personal computing, mobile devices, data centers, automotive, and industrial markets. Micron is known for its innovation in memory technology and contributes significantly to advancing semiconductor manufacturing.

Application

The NAND128W3A2BN6E is a NAND Flash memory chip commonly used in various electronic applications. Its primary application areas include:
1. Embedded Systems: Provides data storage for microcontrollers and processors.
2. Consumer Electronics: Used in devices like digital cameras, smartphones, and tablets for data storage.
3. Industrial Applications: Supports data logging and firmware storage in industrial control systems.
4. Automotive Systems: Stores navigation data and firmware updates in automotive infotainment systems.
5. Networking Equipment: Utilized for configuration and operational data storage in routers and switches.
6. Solid-State Drives (SSDs): Acts as a storage medium in SSDs for faster data access.
These versatile applications make it suitable for any environment requiring reliable, non-volatile data storage solutions.

Package

The NAND128W3A2BN6E is a NAND Flash memory chip with a TSOP-48 package type. TSOP stands for Thin Small Outline Package, and the "48" indicates it has 48 pins. This package is designed for compact size and efficient space utilization in electronic devices.

Frequently Asked Questions

Q: What is the memory size and organization of the NAND128W3A2BN6E?
A: It has a 128Mbit capacity organized as 16M x 8 bits, suitable for high-density data storage applications.

Q: Is this NAND Flash memory volatile or non-volatile?
A: It is non-volatile, meaning data is retained without power, ideal for firmware and code storage.

Q: What is the typical write cycle time for a page?
A: The write cycle time for a word or page is 50ns, enabling efficient programming operations.

Q: What voltage supply range does this component require?
A: It operates with a supply voltage range of 2.7V to 3.6V, compatible with standard 3.3V systems.

Q: What is the access time of this NAND Flash device?
A: The access time is 50ns, ensuring fast read operations for parallel memory interface designs.

Q: What package type is available for this part?
A: It comes in a 48-TFSOP package (0.724", 18.40mm Width) with a 48-TSOP supplier device package, surface mount.

Q: What is the operating temperature range for this memory?
A: It operates from -40°C to 85°C (TA), suitable for industrial and extended temperature environments.

Q: Is this component obsolete and still supported?
A: The part status is Obsolete; verify availability with distributors before new design-in use.