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NCE60P12K
+BOM-
제조업체우시 NCE 전력 반도체
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제조업체 부품 #NCE60P12K
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데이터시트 NCE60P12K DataSheet
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사양
| 속성 | 가치 |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2 |
| OperatingTemperature | -55℃~+175℃ |
| Current-ContinuousDrain(Id) | 12A |
| Pd-PowerDissipation | 60W |
| DraintoSourceVoltage | 60V |
| RDS(on) | 100mΩ@10V,12A |
| GateThresholdVoltage(Vgs(th)@Id) | 1.5V |
| Type | 1 piece P-channel |
| GateCharge(Qg) | 37.6nC |
| InputCapacitance(Ciss@Vds) | 1.6307nF@30V |
| ReverseTransferCapacitance(Crss@Vds) | 77.3pF |
개요
Description
This particular MOSFET is known for its ability to handle high voltages and currents, providing robust performance under demanding conditions. Its features typically include a low on-state resistance, enhancing efficiency by minimizing power loss during operation. Additionally, the NCE60P12K is designed to offer fast switching capabilities, which is essential for applications requiring rapid response times.
In terms of physical characteristics, this MOSFET is usually encased in a TO-220 package, allowing for efficient heat dissipation. This makes it suitable for use in environments where thermal management is crucial. Overall, the NCE60P12K is valued for its reliability and efficiency in various electronic applications.
Equivalent
1. IRF9540N by Infineon
2. FQP27P06 by ON Semiconductor
3. SI7465DP by Vishay
4. STP60P60 by STMicroelectronics
Ensure to verify specifications like voltage, current ratings, and package type to confirm compatibility.
Features
1. P-Channel MOSFET: It is a P-channel device, meaning it conducts when a negative voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: The MOSFET typically supports a drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) up to -12A, making it suitable for medium power applications.
3. Low On-Resistance: It features a low on-state resistance (R_DS(on)), which reduces power loss and enhances efficiency in switching applications.
4. High-Speed Switching: The device is capable of high-speed operation, making it ideal for applications requiring rapid switching.
5. Thermal Performance: It often includes features for improved thermal performance, allowing it to operate efficiently under higher temperatures.
6. Package Type: It is usually available in a TO-220 or similar package, which offers good heat dissipation capabilities.
These features make the NCE60P12K suitable for use in power management, motor control, and other electronic circuits requiring efficient and reliable switching.
Pinout
1. Gate (G): This pin controls the MOSFET’s conduction state. Applying a voltage to the gate relative to the source allows current to flow between the source and drain.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is conducting.
3. Source (S): This pin is where the current enters the MOSFET when it is conducting.
The NCE60P12K is used in various applications for switching and amplification. It is part of the NCE Power series of MOSFETs, designed for high-speed, high-efficiency power control applications. Always refer to the specific datasheet to confirm pin configuration and specifications for your particular application.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and power supply circuits for efficient power regulation.
2. Switching Applications: Ideal for load switching and battery management systems due to its low on-resistance.
3. Motor Control: Used in motor drivers and controllers for automotive and industrial applications.
4. Inverter Circuits: Applied in inverter designs for renewable energy systems.
5. Consumer Electronics: Found in devices like laptops and smartphones for battery protection and power management.
Its performance characteristics make it suitable for environments requiring robust and efficient power handling.