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NDS332P
+BOMMOSFET P-CH 20V 1A SUPERSOT3
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제조업체온세미
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제조업체 부품 #NDS332P
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데이터시트 NDS332P DataSheet
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패키지 SOT-3
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.7V, 4.5V |
| Rds On(Max) @ Id Vgs | 300mOhm @ 1.1A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 195 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
개요
Equivalent
- SI2301DS (Vishay)
- DMG2305UX (Diodes Inc.)
- AO3401 (Alpha & Omega)
- BSS84 (Infineon/NXP)
These are P-channel MOSFETs with similar specs (e.g., -20V VDS, -1.7A ID). Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 30V (Drain-Source, VDSS)
- Current Handling: 5.7A (Continuous Drain Current, ID)
- Low On-Resistance: 85mΩ (RDS(on)) at VGS = 10V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Low Threshold Voltage: VGS(th)- Power Dissipation: 1.4W (TA = 25°C)
- Package: SOT-23 (Compact surface-mount)
Ideal for low-voltage switching applications, power management, and load control in portable electronics.
Application
1. Power Management – Switching and load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection in battery packs.
3. DC-DC Converters – Efficient power conversion in voltage regulators.
4. Motor Control – Driving small motors in consumer electronics.
5. Automotive Systems – Low-power switching in infotainment and lighting.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient applications.
