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NDS7002A
+BOMMOSFET N-CH 60V 280MA SOT-23
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제조업체온세미
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제조업체 부품 #NDS7002A
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데이터시트 NDS7002A DataSheet
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패키지 SOT-23-3
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재고5799
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 280mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V |
| Power Dissipation (Max) | 300mW (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
개요
Description
With a low on-resistance, the NDS7002A can conduct large currents with minimal power loss, enhancing energy efficiency. It is commonly used in applications like power management, load switching, and DC-DC converters due to its fast switching speed and robust performance. The component is typically housed in a compact SOT-23 package, which is advantageous for space-constrained designs.
Overall, the NDS7002A is valued for its reliability, high efficiency, and versatility in a wide range of electronic applications, from consumer electronics to industrial equipment.
Equivalent
1. 2N7002 - A standard N-channel MOSFET with similar specifications.
2. BSS138 - Another N-channel MOSFET with comparable characteristics.
3. IRFML8244 - Offers similar performance in a smaller package.
4. PMV16UN - Provides similar electrical performance.
These alternatives should be evaluated for specific application requirements to ensure compatibility.
Features
1. Low On-Resistance: It has a low on-resistance (R_DS(on)), which minimizes power loss and enhances efficiency in switching applications.
2. High-Speed Switching: The device offers rapid switching speeds, making it suitable for applications requiring quick response times.
3. Drain-Source Voltage: It supports a drain-source voltage (V_DS) of up to 60V, allowing it to handle a wide range of voltages in various applications.
4. Continuous Drain Current: The continuous drain current (I_D) capacity is typically around 200mA, suitable for low to moderate power applications.
5. Gate-Source Voltage: It can handle a gate-source voltage (V_GS) of ±20V, offering flexibility in driving signals.
6. Compact Package: The device is available in a small SOT-23 package, ideal for space-constrained circuit designs.
These features make the NDS7002A suitable for applications such as load switches, power management, and signal switching in consumer electronics, automotive, and industrial systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Source (S): This is the terminal through which the charge carriers enter the MOSFET. For an N-channel MOSFET like the NDS7002A, current flows from the source to the drain when the gate voltage is sufficient.
3. Drain (D): This terminal is where the charge carriers exit the MOSFET when it is in the on state.
The NDS7002A is designed for low voltage applications and is known for its fast switching speed and low on-resistance, making it suitable for various applications in electronic circuits.
Manufacturer
Application
1. Switching Applications: Ideal for high-speed switching in power management circuits.
2. DC-DC Converters: Used in voltage regulation applications to efficiently convert energy.
3. Load Switches: Acts as an efficient load switch in electronic circuits.
4. Battery Management Systems: Utilized in battery protection and charging circuits.
5. Consumer Electronics: Commonly found in devices requiring compact and efficient power management solutions.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.