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NDT452AP
+BOMPOWER FIELD-EFFECT TRANSISTOR, 5
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제조업체비조 반도체 회사
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제조업체 부품 #NDT452AP
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데이터시트 NDT452AP DataSheet
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패키지 SOT-223-4
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재고3365
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 65mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 2.8V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 690 pF @ 15 V |
| Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
개요
Description
NDT452AP is a specialized course or module focused on Non-Destructive Testing (NDT) techniques, likely covering advanced principles, applications, and practical skills in industrial inspection. It may include methods like ultrasonic testing, radiography, magnetic particle testing, and eddy current testing, emphasizing defect detection, material evaluation, and safety standards.
Designed for engineering students or professionals, the course typically blends theoretical knowledge with hands-on training, preparing learners for certifications or roles in quality control, aerospace, manufacturing, or oil and gas industries. Key topics may involve equipment operation, data interpretation, and compliance with industry regulations (e.g., ASNT, ISO).
The exact curriculum varies by institution but aims to equip participants with expertise in maintaining structural integrity without damaging materials. Check specific program details for prerequisites or accreditation.
Equivalent
- SI2301DS (Vishay)
- AO3401 (Alpha & Omega)
- DMG2305UX (Diodes Inc.)
- IRLML6401 (Infineon)
These offer comparable specs (e.g., -20V/-4A, low RDS(on)). Verify pinout and parameters for exact compatibility.
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connects to the load (high-side switching).
3. Source (S): Connected to the power supply (V+).
Key Features:
- -30V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low on-resistance (RDS(on) ≈ 25mΩ at VGS = -10V)
- Logic-level gate drive (VGS ≤ -4.5V).
Commonly used in power management, load switching, and DC-DC converters.
Manufacturer
Deye is a Chinese company specializing in power electronics and renewable energy products, including solar inverters, hybrid inverters, and energy storage solutions. Established in 2010, it is known for its R&D focus and global market presence in the solar and energy storage sectors.
The NDT452AP is a 5kW hybrid inverter, designed for residential solar and battery storage applications, supporting grid-tied and off-grid use.