사양
| 속성 | 가치 |
| Package / Case | Tube |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 160 A |
| Current - Collector Pulsed(Icm) | 160 A |
| Vce(on)(Max) @ Vge Ic | 2.3V @ 15V, 40A |
| Power - Max | 454 W |
| Switching Energy | 1.6mJ (on), 1.1mJ (off) |
| Input Type | Standard |
| Gate Charge | 212 nC |
| Td(on / off) @ 25°C | 18ns/145ns |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 136 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
개요
Description
The NGTB40N120FL3WG is a power semiconductor device, specifically an Insulated Gate Bipolar Transistor (IGBT), designed for high-efficiency and high-speed switching applications. It is commonly used in power electronics due to its capability to handle high voltages and currents while maintaining low power losses, making it ideal for applications such as motor drives, inverters, and power supply units.
Key features of the NGTB40N120FL3WG include:
1. Voltage and Current Ratings: It typically supports a high collector-emitter voltage, often in the range of 1200V, and can handle a continuous current of around 40A.
2. Low On-State Voltage Drop: This allows for reduced power dissipation and improved efficiency during operation.
3. Fast Switching Speeds: Facilitates quick transitions between on and off states, enhancing performance in dynamic applications.
4. Ruggedness and Reliability: Designed to withstand significant electrical stress and temperature variations, promoting longevity and stable operation.
These attributes make the NGTB40N120FL3WG suitable for a wide range of demanding industrial and consumer electronics applications.
Key features of the NGTB40N120FL3WG include:
1. Voltage and Current Ratings: It typically supports a high collector-emitter voltage, often in the range of 1200V, and can handle a continuous current of around 40A.
2. Low On-State Voltage Drop: This allows for reduced power dissipation and improved efficiency during operation.
3. Fast Switching Speeds: Facilitates quick transitions between on and off states, enhancing performance in dynamic applications.
4. Ruggedness and Reliability: Designed to withstand significant electrical stress and temperature variations, promoting longevity and stable operation.
These attributes make the NGTB40N120FL3WG suitable for a wide range of demanding industrial and consumer electronics applications.
Equivalent
The NGTB40N120FL3WG is an IGBT with a 1200V, 40A rating. Equivalent products might include:
1. Infineon IKW40N120T2: A 1200V, 40A IGBT with similar specifications.
2. STMicroelectronics STGW40V120DF3: Another 1200V, 40A IGBT.
3. Rohm RGTV40NS65: A 1200V, 40A IGBT designed for similar applications.
When choosing equivalents, always verify specific parameters such as switching speed, package type, and thermal characteristics to ensure compatibility.
1. Infineon IKW40N120T2: A 1200V, 40A IGBT with similar specifications.
2. STMicroelectronics STGW40V120DF3: Another 1200V, 40A IGBT.
3. Rohm RGTV40NS65: A 1200V, 40A IGBT designed for similar applications.
When choosing equivalents, always verify specific parameters such as switching speed, package type, and thermal characteristics to ensure compatibility.
Features
The NGTB40N120FL3WG is an insulated gate bipolar transistor (IGBT) module. It features a 1200V collector-emitter voltage and a 40A continuous collector current, making it suitable for high voltage and high current applications. The device is designed to offer a low on-state voltage drop, which improves efficiency by reducing power loss during operation. It also comes with a fast switching speed, enhancing its performance in high-frequency applications.
This IGBT module typically includes a built-in free-wheeling diode, which protects the device from voltage spikes and enhances its reliability. The NGTB40N120FL3WG is designed with a robust and compact package that provides excellent thermal performance, allowing it to handle high power levels with effective heat dissipation. This makes it ideal for use in industrial applications such as motor drives, inverters, and power supplies.
Overall, the NGTB40N120FL3WG provides a balance of high efficiency, reliability, and performance, making it suitable for various power electronic applications.
This IGBT module typically includes a built-in free-wheeling diode, which protects the device from voltage spikes and enhances its reliability. The NGTB40N120FL3WG is designed with a robust and compact package that provides excellent thermal performance, allowing it to handle high power levels with effective heat dissipation. This makes it ideal for use in industrial applications such as motor drives, inverters, and power supplies.
Overall, the NGTB40N120FL3WG provides a balance of high efficiency, reliability, and performance, making it suitable for various power electronic applications.
Pinout
The NGTB40N120FL3WG is an IGBT (Insulated Gate Bipolar Transistor) produced by ON Semiconductor. It typically comes in a TO-247 package, which generally includes three pins: the collector, the emitter, and the gate.
1. Collector (C): This is the main terminal through which the current flows into the IGBT. It handles the high voltage and current and is connected to the load in the circuit.
2. Emitter (E): This terminal is where the current exits the IGBT. It is typically connected to the ground or the negative side of the power supply.
3. Gate (G): This terminal is used to control the IGBT. By applying voltage to the gate, you can switch the IGBT on or off, thereby controlling the current flow between the collector and the emitter.
The NGTB40N120FL3WG is designed for high-speed switching and is used in various applications such as power supplies, motor drives, and inverters.
1. Collector (C): This is the main terminal through which the current flows into the IGBT. It handles the high voltage and current and is connected to the load in the circuit.
2. Emitter (E): This terminal is where the current exits the IGBT. It is typically connected to the ground or the negative side of the power supply.
3. Gate (G): This terminal is used to control the IGBT. By applying voltage to the gate, you can switch the IGBT on or off, thereby controlling the current flow between the collector and the emitter.
The NGTB40N120FL3WG is designed for high-speed switching and is used in various applications such as power supplies, motor drives, and inverters.
Manufacturer
The NGTB40N120FL3WG is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading company in the semiconductor industry. It specializes in designing, manufacturing, and supplying a wide array of semiconductor components, including power management devices, sensors, and connectivity solutions. These components are essential for various applications across different industries, such as automotive, industrial, consumer electronics, and communications. The company is recognized for its focus on energy-efficient innovations and technologies.
Application
The NGTB40N120FL3WG is an IGBT (Insulated Gate Bipolar Transistor) used in various high-power applications. Its primary application areas include:
1. Inverters: Utilized in solar power inverters and motor drive inverters due to its efficient switching capabilities.
2. Power Supplies: Employed in switch-mode power supplies for industrial and consumer electronics.
3. Motor Drives: Used in AC & DC motor control systems for industrial automation.
4. Uninterruptible Power Supplies (UPS): Critical for backup power systems.
5. Welders and Induction Heating: Applied in high-frequency welding and heating applications.
Its high voltage and fast switching characteristics make it suitable for these demanding environments.
1. Inverters: Utilized in solar power inverters and motor drive inverters due to its efficient switching capabilities.
2. Power Supplies: Employed in switch-mode power supplies for industrial and consumer electronics.
3. Motor Drives: Used in AC & DC motor control systems for industrial automation.
4. Uninterruptible Power Supplies (UPS): Critical for backup power systems.
5. Welders and Induction Heating: Applied in high-frequency welding and heating applications.
Its high voltage and fast switching characteristics make it suitable for these demanding environments.
Package
The NGTB40N120FL3WG is an Insulated Gate Bipolar Transistor (IGBT) with a TO-247 package type.
