사양
| 속성 | 가치 |
| Package / Case | Bulk,Tube |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 650 V |
| Current - Collector(Ic)(Max) | 100 A |
| Current - Collector Pulsed(Icm) | 200 A |
| Vce(on)(Max) @ Vge Ic | 2V @ 15V, 75A |
| Power - Max | 595 W |
| Switching Energy | 1.5mJ (on), 1mJ (off) |
| Input Type | Standard |
| Gate Charge | 310 nC |
| Td(on / off) @ 25°C | 110ns/270ns |
| Test Condition | 400V, 75A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 80 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
개요
Description
The NGTB75N65FL2WG is a high-performance 650V, 75A IGBT (Insulated Gate Bipolar Transistor) from ON Semiconductor, designed for power-switching applications. Key features include:
- Low VCE(sat) (1.55V typical) for reduced conduction losses.
- Fast switching with low turn-on/off losses, improving efficiency.
- High current capability (75A continuous, 150A pulsed).
- Robust design with a wide operating temperature range (-55°C to +175°C).
- Co-packaged anti-parallel diode for simplified circuit design.
Ideal for motor drives, UPS systems, welding equipment, and industrial inverters, this IGBT balances efficiency and thermal performance. Its TO-247 package ensures effective heat dissipation.
For detailed specs, refer to the datasheet.
- Low VCE(sat) (1.55V typical) for reduced conduction losses.
- Fast switching with low turn-on/off losses, improving efficiency.
- High current capability (75A continuous, 150A pulsed).
- Robust design with a wide operating temperature range (-55°C to +175°C).
- Co-packaged anti-parallel diode for simplified circuit design.
Ideal for motor drives, UPS systems, welding equipment, and industrial inverters, this IGBT balances efficiency and thermal performance. Its TO-247 package ensures effective heat dissipation.
For detailed specs, refer to the datasheet.
Features
The NGTB75N65FL2WG is a 650V, 75A IGBT from Infineon, designed for high-efficiency power applications. Key features include:
- Low VCE(sat): Reduces conduction losses for better efficiency.
- Fast switching: Optimized for high-frequency operation.
- High current rating (75A): Suitable for demanding applications.
- 650V breakdown voltage: Robust for industrial and automotive uses.
- Temperature-stable performance: Operates reliably under high thermal stress.
- Co-packaged diode: Integrated anti-parallel diode for simplified design.
- Low EMI: Minimizes noise in switching circuits.
Ideal for motor drives, UPS, and renewable energy systems.
- Low VCE(sat): Reduces conduction losses for better efficiency.
- Fast switching: Optimized for high-frequency operation.
- High current rating (75A): Suitable for demanding applications.
- 650V breakdown voltage: Robust for industrial and automotive uses.
- Temperature-stable performance: Operates reliably under high thermal stress.
- Co-packaged diode: Integrated anti-parallel diode for simplified design.
- Low EMI: Minimizes noise in switching circuits.
Ideal for motor drives, UPS, and renewable energy systems.
Pinout
The NGTB75N65FL2WG is a 75A, 650V IGBT with an integrated anti-parallel diode, housed in a TO-247-3 package.
Pin Count: 3 pins (standard TO-247 configuration).
Pin Functions:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (connected to load).
3. Emitter (E) – Ground/reference terminal (diode cathode).
Key Features:
- Low VCE(sat) for efficiency.
- Fast switching for high-frequency applications.
- Integrated diode for reverse current handling.
Commonly used in motor drives, inverters, and power supplies.
Pin Count: 3 pins (standard TO-247 configuration).
Pin Functions:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (connected to load).
3. Emitter (E) – Ground/reference terminal (diode cathode).
Key Features:
- Low VCE(sat) for efficiency.
- Fast switching for high-frequency applications.
- Integrated diode for reverse current handling.
Commonly used in motor drives, inverters, and power supplies.
Application
The NGTB75N65FL2WG is a high-voltage IGBT transistor primarily used in:
- Power Electronics: High-efficiency converters, inverters, and motor drives.
- Industrial Applications: Welding equipment, UPS systems, and industrial automation.
- Renewable Energy: Solar inverters and wind power systems.
- Automotive: Electric vehicle (EV) charging and traction systems.
- Consumer Electronics: High-power SMPS (switched-mode power supplies).
Its 650V/75A rating and low switching losses make it ideal for high-power, high-frequency applications.
- Power Electronics: High-efficiency converters, inverters, and motor drives.
- Industrial Applications: Welding equipment, UPS systems, and industrial automation.
- Renewable Energy: Solar inverters and wind power systems.
- Automotive: Electric vehicle (EV) charging and traction systems.
- Consumer Electronics: High-power SMPS (switched-mode power supplies).
Its 650V/75A rating and low switching losses make it ideal for high-power, high-frequency applications.
