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NSBC143ZPDP6T5G
+BOMTRANS PREBIAS 2NPN 50V SOT-963
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제조업체온세미
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제조업체 부품 #NSBC143ZPDP6T5G
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사양
| 속성 | 가치 |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 339mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-963 |
| Supplier Device Package | SOT-963 |
| Base Product Number | NSBC143 |
개요
Description
To understand NSBC143ZPDP6T5G, one would typically look for its datasheet, which would include critical information like electrical characteristics, pin configuration, operational parameters, and application notes. This aids engineers in selecting the appropriate component for their designs, ensuring compatibility and optimal performance in circuits.
If you are looking for detailed specifications or application guidelines, consulting the manufacturer's website or technical resources would provide definitive insights.
Equivalent
Features
1. Frequency Range: Operates in the 2.4 GHz ISM band, suitable for various wireless protocols like Bluetooth and Zigbee.
2. High Sensitivity: Offers excellent sensitivity for improved range and reliability in communication.
3. Low Power Consumption: Designed for energy efficiency, making it ideal for battery-operated devices.
4. Integrated Circuit Design: Combines multiple functions into a single chip, reducing space and component count.
5. Data Rate Support: Capable of supporting various data rates, enhancing versatility for different applications.
6. Robust Performance: Withstand interference and provide stable connections in challenging environments.
7. Compact Size: Small footprint allows for integration into space-constrained designs.
These features make the NSBC143ZPDP6T5G suitable for IoT, smart home devices, and other wireless applications.
Pinout
The pin configuration typically includes:
1. Gate 1: Controls the first N-channel MOSFET.
2. Drain 1: Output for the first MOSFET, where the load connects.
3. Source 1: Ground or return path for the first MOSFET.
4. Gate 2: Controls the second N-channel MOSFET.
5. Drain 2: Output for the second MOSFET.
6. Source 2: Ground or return path for the second MOSFET.
7. Drain/Source Common: Typically connected for shared configuration.
8. Thermal Pad: For heat dissipation.
This MOSFET is often used in applications for efficient power switching due to its low on-resistance and high-speed performance.