NST65010MW6T1G

이미지는 참조용입니다.

NST65010MW6T1G

+BOM

TRANS 2PNP 65V 100MA SC88/SC70

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Part Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NST65010
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (h FE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz

개요

Description

The NST65010MW6T1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. With a voltage rating of 60V and a maximum current rating of 100A, it is suitable for various applications, including DC-DC converters, motor drivers, and power supplies.
Key features include low on-resistance (Rds(on)), which minimizes power loss and improves efficiency, and fast switching speeds that enhance overall system performance. The device is housed in a TO-220 package, facilitating efficient thermal management and easy mounting on heat sinks.
The NST65010MW6T1G is optimized for high-frequency operation, making it ideal for applications requiring rapid switching. Its robust construction and high reliability ensure long-term performance in demanding environments. Overall, it is a versatile component for engineers looking to optimize power delivery systems in consumer electronics, automotive, and industrial applications.

Equivalent

The NST65010MW6T1G is a high-voltage, high-speed MOSFET. Equivalent products include the STMicroelectronics STP16NF06, Fairchild FQP16N06, and Infineon's IPP16N06. Always verify specifications like voltage, current, and Rds(on) when searching for replacements to ensure compatibility with your application.

Features

The NST65010MW6T1G is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
- Drain-Source Voltage (V_DS): 100V, allowing for use in high-voltage applications.
- Continuous Drain Current (I_D): 65A, providing robust performance in power delivery.
- R_DS(on): Low on-resistance of approximately 10 mΩ (at V_GS = 10V), ensuring minimal power loss during operation.
- Gate Threshold Voltage (V_GS(th)): Typically between 2-4V, enabling easy drive with standard logic levels.
- Fast Switching Speed: Suitable for high-frequency applications, enhancing efficiency.
- Package Type: Available in a TO-220 or DPAK format for versatile mounting options.
- Thermal Resistance: Good thermal performance for reliable operation in various environments.
These features make the NST65010MW6T1G ideal for use in power supplies, motor drives, and other applications requiring efficient power conversion and management.

Pinout

The NST65010MW6T1G is a power MOSFET with a total of 8 pins. It is designed for high-speed switching applications and features a N-channel configuration. The main functions of its pins include:
1. Gate (G): Controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The output where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): The terminal through which current exits the device when it is conducting.
The pin configuration allows for efficient management of power in applications such as motor control, power supplies, and other electronic circuits. The NST65010MW6T1G is valued for its low on-resistance and fast switching speed, making it suitable for various electronic and power management applications.

Manufacturer

The NST65010MW6T1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including power management, analog, logic, discrete, and other integrated circuits. The company serves various industries, such as automotive, industrial, communications, consumer electronics, and computing. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has grown through a combination of organic growth and strategic acquisitions, positioning itself as a key player in the semiconductor market. The NST65010MW6T1G is a part of their product offerings in the field of power management and switching devices, often utilized in applications requiring efficient voltage regulation and control.

Application

The NST65010MW6T1G is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include:
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Switching Power Supplies: To enhance efficiency in industrial and consumer electronics.
3. Motor Drives: In controlling electric motors for various applications.
4. LED Drivers: For managing power in LED lighting systems.
5. Battery Management Systems: Ensuring safe and efficient charging and discharging.
Overall, it is suitable for data centers, telecommunications, automotive applications, and renewable energy systems.

Package

The NST65010MW6T1G is packaged in a TO-220 form factor. This package type is typically used for power transistors and includes a metal tab for heat dissipation, facilitating thermal management in electronic applications.

NST65010MW6T1G과 관련된 제품