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NT5AD256M16E4-JR

1.2V 4Gbit 1.6GHz DDR4 SDRAM Ball-96 Memory (ICs) RoHS

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제조업체 부품 #NT5AD256M16E4-JR
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사양

속성	가치
Packaging	Ball-96
ClockFrequency	1.6GHz
MemoryFormat	DDR4 SDRAM
MemorySize	4Gbit
Operatingtemperature	0℃~+95℃
Voltage-Supply	1.2V

개요

Description

The NT5AD256M16E4-JR is a 256Mb (16Mx16) DDR SDRAM module from Nanya Technology. It operates at 1.5V, supports DDR4 technology, and features a 16-bit bus width with a speed grade of -JR (typically 3200 Mbps).
Key specs:
- Density: 256Mx16 (4Gb)
- Speed: Up to 3200 MT/s (PC4-25600)
- CAS Latency (CL): 22
- Voltage: 1.2V (VDD) / 1.2V (VDDQ)
- Package: 96-ball FBGA
Designed for high-performance computing, it’s used in servers, workstations, and enterprise storage. The -JR suffix indicates its industrial-grade reliability.
For exact timings and compatibility, refer to the datasheet.

Equivalent

Equivalent products to the NT5AD256M16E4-JR (256Mb DDR2 SDRAM) include:
- MT47H64M16HR-25E (Micron)
- K4T51163QJ-BCE7 (Samsung)
- H5PS5162FFR (SK Hynix)
These are 256Mb (16Mx16) DDR2 chips with similar speed grades (e.g., 400MHz/533MHz) and package options (e.g., FBGA). Verify datasheets for exact compatibility in voltage, timing, and pinout.

Features

The NT5AD256M16E4-JR is a DDR4 SDRAM module with the following key features:
- Capacity: 4GB (256M x 16)
- Speed: 2666 Mbps (PC4-21300)
- Voltage: 1.2V (low power)
- Organization: 256M x 16-bit
- CAS Latency (CL): 19 cycles
- Package: 96-ball FBGA
- Operating Temp: Commercial (0°C to 95°C)
- On-Die Termination (ODT): Yes
- Refresh: Auto & self-refresh
- VDDQ: 1.2V
Designed for high-performance computing, it supports DDR4-2666 speeds with efficient power consumption.

Manufacturer

The NT5AD256M16E4-JR is a DDR4 SDRAM module manufactured by Nanya Technology Corporation, a Taiwanese semiconductor company specializing in memory products.
Nanya Technology is a leading DRAM producer, focusing on the design, development, and manufacturing of dynamic random-access memory (DRAM) chips. It is one of the key players in the global memory market, competing with companies like Samsung, SK Hynix, and Micron.
The company is known for its cost-effective memory solutions and serves industries such as computing, consumer electronics, and networking. Founded in 1995, Nanya is headquartered in Taoyuan, Taiwan, and operates advanced fabrication facilities to produce high-performance memory products.

Package

The NT5AD256M16E4-JR is a DDR4 SDRAM module in a 288-pin DIMM package. It operates at 1.2V and is designed for high-speed, low-power applications. The "JR" suffix indicates its commercial temperature range (0°C to 85°C). This module is commonly used in servers, workstations, and enterprise systems.

Frequently Asked Questions

Q: What is the memory density and organization of the NT5AD256M16E4-JR?
A: It has a 4Gbit density organized as 256M x 16, ideal for high-bandwidth applications.

Q: What is the maximum operating clock frequency supported?
A: This DDR4 SDRAM supports a clock frequency up to 1.6GHz, delivering fast data rates.

Q: What is the supply voltage requirement for this component?
A: It requires a standard DDR4 supply voltage of 1.2V, ensuring low power consumption.

Q: What is the operating temperature range for this device?
A: It operates reliably from 0°C to +95°C, suitable for commercial and industrial environments.

Q: What package type does the NT5AD256M16E4-JR use?
A: It comes in a 96-ball BGA package, facilitating compact PCB design and thermal management.

Q: Is this component suitable for high-density memory modules like RDIMMs?
A: Yes, its 4Gbit density and x16 organization make it ideal for building high-capacity DDR4 modules.