NT5CB128M16JR-FL

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NT5CB128M16JR-FL

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2Gbit 1.066GHz DDR3 SDRAM TFBGA-96 Memory (ICs) RoHS

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사양

속성 가치
Packaging TFBGA-96
Clock Frequency 1.066GHz
Memory Format DDR3 SDRAM
Memory Size 2Gbit
Operating temperature 0℃~+95℃
Voltage - Supply 1.425V~1.575V;1.283V~1.45V

개요

Description

The NT5CB128M16JR-FL is a DRAM chip manufactured by Nanya Technology, designed for high-performance memory applications. This component is part of the DDR3 memory family, known for its higher bandwidth and improved power efficiency compared to its predecessors. The model number indicates that it is a 128 Megabit (16 Megax16) chip, which is a common configuration for devices requiring efficient and reliable memory solutions.
Key features of the NT5CB128M16JR-FL include a high data transfer rate, typically up to 1600 MT/s, and lower operating voltage, usually around 1.5V, which contributes to reduced energy consumption. The chip is suitable for various applications, including computing, networking, and consumer electronics, where performance and energy efficiency are critical. It also supports features like on-die termination (ODT) and dynamic on-chip calibration (DCC), enhancing signal integrity and reliability.
Overall, the NT5CB128M16JR-FL offers a robust solution for systems needing fast and dependable memory, balancing speed and power consumption effectively.

Equivalent

The NT5CB128M16JR-FL is a 2Gb DDR3 SDRAM chip. Equivalent products include:
1. Micron MT41K128M16JT-125
2. Samsung K4B2G1646F-BCK0
3. Hynix H5TQ2G63GFR-RDC
4. Elpida EDJ2116EBSE-GN-F
5. Kingston KVR21N15S8/4
These alternatives offer similar specifications, such as density, data rate, and voltage, making them suitable replacements depending on availability and specific application requirements.

Features

The NT5CB128M16JR-FL is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip manufactured by Nanya Technology. It has a capacity of 2Gb (gigabits) and is organized in a 128M x 16-bit configuration. Key features of this memory chip include:
1. Speed and Performance: It supports various clock rates up to 1600Mbps, ensuring high-speed data processing.
2. Voltage: Operates at a standard 1.5V power supply, which is common for DDR3 memory modules.
3. CAS Latency: Supports multiple CAS latency values, typically CL9 to CL11, allowing for flexibility in performance tuning.
4. Package Type: Offered in a standard 96-ball FBGA (Fine-pitch Ball Grid Array) package, which is compact and suitable for densely packed circuit boards.
5. Temperature Range: Designed to operate within commercial temperature ranges, typically from 0°C to 95°C, making it suitable for a wide range of applications.
6. Applications: Commonly used in personal computers, laptops, networking equipment, and consumer electronics, providing reliable and efficient memory performance.
These features make the NT5CB128M16JR-FL a versatile choice for various technology solutions requiring efficient memory management.

Manufacturer

The NT5CB128M16JR-FL is a DRAM (Dynamic Random-Access Memory) chip manufactured by Nanya Technology Corporation. Nanya Technology is a Taiwanese company that specializes in the production of semiconductor products, particularly memory solutions. Founded in 1995, Nanya is a leading memory provider, focusing on DRAM products which are essential components in computing devices, including PCs, servers, mobile devices, and various electronic applications. The company is known for its research and development capabilities, as well as for its partnerships with other technology firms to advance semiconductor technology. Nanya Technology is part of the Formosa Plastics Group, which is one of the largest conglomerates in Taiwan. The organization is committed to delivering high-performance, reliable, and cost-effective memory solutions to a global market.

Application

The NT5CB128M16JR-FL is a DDR3 SDRAM chip commonly used in applications requiring high-speed data processing and storage. It is particularly suited for:
1. Computing Devices: Used in laptops, desktops, and servers for efficient multitasking and improved performance.
2. Networking Equipment: Helps in handling high data throughput in routers and switches.
3. Consumer Electronics: Found in smart TVs, gaming consoles, and set-top boxes.
4. Telecommunications: Supports data buffering and processing in mobile base stations and infrastructure.
5. Embedded Systems: Utilized in industrial devices and automotive electronics for reliable performance.
These applications benefit from its fast data transfer rates and low power consumption.

Package

The NT5CB128M16JR-FL is packaged in a 96-ball Fine Pitch Ball Grid Array (FBGA).

Frequently Asked Questions


Q: What is the memory density and organization of this DDR3 component?
A: It is a 2Gbit DDR3 SDRAM, organized as 128M words x 16 bits, suitable for high-bandwidth memory applications.


Q: What is the maximum operating clock frequency supported?
A: It supports a maximum clock frequency of 1.066 GHz, enabling high-speed data transfer rates for demanding tasks.


Q: What are the recommended power supply voltage ranges?
A: The core and I/O require 1.425V~1.575V; the VDDQ voltage range is 1.283V~1.45V for optimal performance.


Q: What is the operating temperature range for this device?
A: It operates within a commercial temperature range of 0°C to +95°C, suitable for standard computing environments.


Q: What package type is used for the NT5CB128M16JR-FL?
A: It comes in a TFBGA-96 package, offering a compact footprint for space-constrained PCB designs.


Q: Is this component suitable for high-speed memory upgrades?
A: Yes, with 1.066 GHz speed and 2Gbit density, it is ideal for DDR3-based modules requiring high throughput.


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