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NTB45N06LT4G
+BOMMOSFET N-CH 60V 45A D2PAK
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제조업체온세미
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제조업체 부품 #NTB45N06LT4G
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데이터시트 NTB45N06LT4G DataSheet
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 45A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 28mOhm @ 22.5A, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 32 nC @ 5 V |
| Vgs(Max) | ±15V |
| Input Capacitance(Ciss)(Max) @ Vds | 1700 pF @ 25 V |
| Power Dissipation (Max) | 2.4W (Ta), 125W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK |
개요
Description
The NTB45N06LT4G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general-purpose switching and amplifier applications. It is manufactured by ON Semiconductor. Key features include:
1. Voltage and Current Ratings: The MOSFET has a maximum drain-source voltage (V_DS) of 60V and can handle a continuous drain current (I_D) of 45A.
2. R_DS(on): It exhibits a low on-resistance, which minimizes power loss and enhances efficiency.
3. Package: Available in a DPAK package, making it suitable for surface mounting on PCBs.
4. Thermal Performance: The design allows for efficient heat dissipation, facilitating operation in high-temperature environments.
5. Applications: Commonly used in power management, motor control, and load switching circuits.
6. Efficiency: Its fast switching speed improves efficiency in high-frequency applications.
The NTB45N06LT4G is valued for its robustness and reliability in various electronic designs, ensuring performance in both consumer electronics and industrial systems.
1. Voltage and Current Ratings: The MOSFET has a maximum drain-source voltage (V_DS) of 60V and can handle a continuous drain current (I_D) of 45A.
2. R_DS(on): It exhibits a low on-resistance, which minimizes power loss and enhances efficiency.
3. Package: Available in a DPAK package, making it suitable for surface mounting on PCBs.
4. Thermal Performance: The design allows for efficient heat dissipation, facilitating operation in high-temperature environments.
5. Applications: Commonly used in power management, motor control, and load switching circuits.
6. Efficiency: Its fast switching speed improves efficiency in high-frequency applications.
The NTB45N06LT4G is valued for its robustness and reliability in various electronic designs, ensuring performance in both consumer electronics and industrial systems.
Equivalent
The NTB45N06LT4G is an N-channel MOSFET. Equivalent products include:
1. IRFZ44N from International Rectifier/Infineon
2. STP55NF06 from STMicroelectronics
3. FDPF33N25 from ON Semiconductor
4. FQP50N06 from Fairchild Semiconductor/ON Semiconductor
When choosing an equivalent, ensure specifications like the voltage rating, current handling, Rds(on), and package type match your requirements.
1. IRFZ44N from International Rectifier/Infineon
2. STP55NF06 from STMicroelectronics
3. FDPF33N25 from ON Semiconductor
4. FQP50N06 from Fairchild Semiconductor/ON Semiconductor
When choosing an equivalent, ensure specifications like the voltage rating, current handling, Rds(on), and package type match your requirements.
Features
The NTB45N06LT4G is an N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 45A, making it suitable for medium to high power applications.
2. R_DS(on): The MOSFET has a low on-state resistance, typically around 24 mΩ, which minimizes power loss and improves efficiency.
3. Package Type: It is available in a DPAK (TO-252) package, which is compact and ideal for surface-mount applications.
4. Thermal Performance: The device is designed for good thermal performance, with efficient heat dissipation capabilities.
5. Gate Charge: It features a relatively low gate charge, which enables fast switching speeds and reduces switching losses.
6. Application Areas: It is commonly used in applications such as DC-DC converters, motor controllers, and power management in various electronic devices.
These features make the NTB45N06LT4G a reliable choice for applications requiring efficient and robust power control.
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 45A, making it suitable for medium to high power applications.
2. R_DS(on): The MOSFET has a low on-state resistance, typically around 24 mΩ, which minimizes power loss and improves efficiency.
3. Package Type: It is available in a DPAK (TO-252) package, which is compact and ideal for surface-mount applications.
4. Thermal Performance: The device is designed for good thermal performance, with efficient heat dissipation capabilities.
5. Gate Charge: It features a relatively low gate charge, which enables fast switching speeds and reduces switching losses.
6. Application Areas: It is commonly used in applications such as DC-DC converters, motor controllers, and power management in various electronic devices.
These features make the NTB45N06LT4G a reliable choice for applications requiring efficient and robust power control.
Pinout
The NTB45N06LT4G is an N-channel MOSFET. It typically comes in a DPAK (TO-252) package, which generally has three leads/pins and a tab. The pin configuration for this package is as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current enters the MOSFET.
3. Source (S): This pin is where the current exits the MOSFET.
4. Tab (connected to Drain): The tab is internally connected to the drain and is often used for heat dissipation.
The primary function of the NTB45N06LT4G is to serve as a switch or amplifier in electronic circuits. Its characteristics, such as low on-state resistance and high-speed switching, make it suitable for applications in power management, motor control, and other high-efficiency power systems.
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current enters the MOSFET.
3. Source (S): This pin is where the current exits the MOSFET.
4. Tab (connected to Drain): The tab is internally connected to the drain and is often used for heat dissipation.
The primary function of the NTB45N06LT4G is to serve as a switch or amplifier in electronic circuits. Its characteristics, such as low on-state resistance and high-speed switching, make it suitable for applications in power management, motor control, and other high-efficiency power systems.
Manufacturer
The NTB45N06LT4G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor manufacturing company that specializes in intelligent technology solutions. The company designs and produces a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace applications. Onsemi focuses on energy-efficient innovations, aiming to enable its customers to reduce global energy use.
Application
The NTB45N06LT4G is a N-channel MOSFET commonly used in various electronic applications due to its efficient switching capabilities and robust performance. Key application areas include:
1. Power Management: Used in DC-DC converters and power supply circuits for efficient power regulation.
2. Automotive Systems: Suitable for use in automotive electronics for controlling actuators, motors, and lighting systems.
3. Consumer Electronics: Employed in battery-operated devices for efficient load switching and power management.
4. Industrial Automation: Utilized in motor control circuits and relay drive applications.
5. Telecommunications: Used in RF and switching applications for signal routing and power control.
These applications benefit from the MOSFET's low on-resistance and fast switching characteristics.
1. Power Management: Used in DC-DC converters and power supply circuits for efficient power regulation.
2. Automotive Systems: Suitable for use in automotive electronics for controlling actuators, motors, and lighting systems.
3. Consumer Electronics: Employed in battery-operated devices for efficient load switching and power management.
4. Industrial Automation: Utilized in motor control circuits and relay drive applications.
5. Telecommunications: Used in RF and switching applications for signal routing and power control.
These applications benefit from the MOSFET's low on-resistance and fast switching characteristics.
Package
The NTB45N06LT4G is packaged in a DPAK (TO-252) surface-mount package.
