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NTD18N06LT4G
+BOMMOSFET N-CH 60V 18A DPAK
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제조업체온세미
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제조업체 부품 #NTD18N06LT4G
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데이터시트 NTD18N06LT4G DataSheet
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사양
| 속성 | 가치 |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 18A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 65mOhm @ 9A, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 22 nC @ 5 V |
| Vgs(Max) | ±15V |
| Input Capacitance(Ciss)(Max) @ Vds | 675 pF @ 25 V |
| Power Dissipation (Max) | 2.1W (Ta), 55W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
개요
Description
The NTD18N06LT4G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used in electronic circuits for switching and amplification purposes. Manufactured by ON Semiconductor, this component is designed to handle medium power levels and is suitable for applications such as power management, DC-DC converters, and load switching.
Key specifications include:
1. Drain-Source Voltage (Vds): 60V, indicating the maximum voltage the MOSFET can handle between the drain and source terminals.
2. Continuous Drain Current (Id): 18A, representing the maximum current it can conduct continuously.
3. Rds(on): Typically around 0.06 ohms, reflecting the resistance between the drain and source terminals when the MOSFET is in the "on" state, influencing power efficiency.
4. Gate Threshold Voltage (Vgs(th)): Typically between 1V and 2.5V, defining the minimum gate voltage required to turn the MOSFET on.
The NTD18N06LT4G is encapsulated in a TO-252 (DPAK) package, which allows for surface mounting on printed circuit boards (PCBs), making it suitable for compact and efficient circuit designs.
Key specifications include:
1. Drain-Source Voltage (Vds): 60V, indicating the maximum voltage the MOSFET can handle between the drain and source terminals.
2. Continuous Drain Current (Id): 18A, representing the maximum current it can conduct continuously.
3. Rds(on): Typically around 0.06 ohms, reflecting the resistance between the drain and source terminals when the MOSFET is in the "on" state, influencing power efficiency.
4. Gate Threshold Voltage (Vgs(th)): Typically between 1V and 2.5V, defining the minimum gate voltage required to turn the MOSFET on.
The NTD18N06LT4G is encapsulated in a TO-252 (DPAK) package, which allows for surface mounting on printed circuit boards (PCBs), making it suitable for compact and efficient circuit designs.
Equivalent
The NTD18N06LT4G is an N-channel MOSFET commonly used for switching applications. Equivalent products may include:
1. IRL540N by Infineon Technologies
2. FQP30N06L by ON Semiconductor
3. STP36NF06 by STMicroelectronics
4. BUZ11 by Vishay
Ensure compatibility by checking the specific datasheets for electrical characteristics and package specifications.
1. IRL540N by Infineon Technologies
2. FQP30N06L by ON Semiconductor
3. STP36NF06 by STMicroelectronics
4. BUZ11 by Vishay
Ensure compatibility by checking the specific datasheets for electrical characteristics and package specifications.
Features
The NTD18N06LT4G is an N-channel MOSFET designed for various applications. Key features include:
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 60V and a continuous drain current (I_D) rating of 18A, making it suitable for medium-power applications.
2. R_DS(on): The device features a low on-resistance, typically around 0.035 ohms, which helps in reducing power losses and improving efficiency.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically between 1V and 2.5V, indicating the voltage required to turn the MOSFET on.
4. Package Type: It comes in a DPAK (TO-252) package, which is suitable for surface mounting and provides good thermal performance.
5. Temperature Range: It operates over a wide temperature range, typically from -55°C to 175°C, making it reliable in various environments.
6. Applications: The NTD18N06LT4G is commonly used in power management, load switching, and DC-DC converters.
These features make it a versatile component for electronic circuit designs.
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 60V and a continuous drain current (I_D) rating of 18A, making it suitable for medium-power applications.
2. R_DS(on): The device features a low on-resistance, typically around 0.035 ohms, which helps in reducing power losses and improving efficiency.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically between 1V and 2.5V, indicating the voltage required to turn the MOSFET on.
4. Package Type: It comes in a DPAK (TO-252) package, which is suitable for surface mounting and provides good thermal performance.
5. Temperature Range: It operates over a wide temperature range, typically from -55°C to 175°C, making it reliable in various environments.
6. Applications: The NTD18N06LT4G is commonly used in power management, load switching, and DC-DC converters.
These features make it a versatile component for electronic circuit designs.
Pinout
The NTD18N06LT4G is an N-channel MOSFET manufactured by ON Semiconductor. It typically comes in a DPAK (TO-252) package, which has three pins plus a tab. The pin configuration and functions are as follows:
1. Gate (Pin 1): This is the control terminal that modulates the conductivity between the drain and source.
2. Drain (Pin 2): The drain is where the current flows out of the MOSFET. In the DPAK package, the tab also serves as the drain connection and helps in heat dissipation.
3. Source (Pin 3): This is where the current flows into the MOSFET.
The NTD18N06LT4G is designed for applications requiring high-speed switching and thermal efficiency, with characteristics suitable for use in automotive and industrial environments.
1. Gate (Pin 1): This is the control terminal that modulates the conductivity between the drain and source.
2. Drain (Pin 2): The drain is where the current flows out of the MOSFET. In the DPAK package, the tab also serves as the drain connection and helps in heat dissipation.
3. Source (Pin 3): This is where the current flows into the MOSFET.
The NTD18N06LT4G is designed for applications requiring high-speed switching and thermal efficiency, with characteristics suitable for use in automotive and industrial environments.
Manufacturer
The NTD18N06LT4G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor supplier providing a comprehensive portfolio of energy-efficient solutions. They design and produce a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices for various industries. Onsemi focuses on automotive, industrial, cloud power, and IoT solutions, emphasizing sustainable and energy-efficient technologies.
Application
The NTD18N06LT4G is an N-channel MOSFET designed for various applications. Key areas include:
1. Power Management: Used in power supply circuits for efficient voltage and current regulation.
2. DC-DC Converters: Suitable for switching applications in converters requiring high efficiency.
3. Motor Control: Employed in low voltage motor control circuits due to its fast switching capability.
4. Automotive Applications: Used in automotive electronics for systems requiring robust performance.
5. Lighting: Plays a role in LED driver circuits due to its efficiency in switching.
6. Load Switches: Acts as a switch in various electronic applications for toggling loads.
These applications capitalize on its low on-resistance and high-speed switching characteristics.
1. Power Management: Used in power supply circuits for efficient voltage and current regulation.
2. DC-DC Converters: Suitable for switching applications in converters requiring high efficiency.
3. Motor Control: Employed in low voltage motor control circuits due to its fast switching capability.
4. Automotive Applications: Used in automotive electronics for systems requiring robust performance.
5. Lighting: Plays a role in LED driver circuits due to its efficiency in switching.
6. Load Switches: Acts as a switch in various electronic applications for toggling loads.
These applications capitalize on its low on-resistance and high-speed switching characteristics.
Package
The NTD18N06LT4G is a MOSFET transistor produced by ON Semiconductor. Its package type is DPAK (TO-252), which is a surface-mount package designed for high power applications and efficient thermal performance.
