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NTF5P03T3G
+BOMMOSFET P-CH 30V 3.7A SOT223
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제조업체온세미
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제조업체 부품 #NTF5P03T3G
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데이터시트 NTF5P03T3G DataSheet
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재고24835
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사양
| 속성 | 가치 |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 3.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 5.2A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 950 pF @ 25 V |
| Power Dissipation (Max) | 1.56W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 (TO-261) |
개요
Description
If NTF5P03T3G is associated with a particular field or industry, it would be important to consult relevant industry resources, documentation, or contact a knowledgeable professional in that area for a detailed introduction. For example, if it pertains to electronics, checking with manufacturers or technical databases might yield more information. If it's related to academia or courses, contacting the institution or checking academic platforms could help. Providing additional context or checking specific resources in the relevant sector could facilitate a more detailed understanding.
Equivalent
1. IRF9540N by Infineon Technologies
2. FQP27P06 by ON Semiconductor
3. SI7467DP by Vishay
4. BSS84 by Fairchild (now part of ON Semiconductor)
5. AO3401 by Alpha & Omega Semiconductor
These equivalents should be verified for specific electrical characteristics and package compatibility.
Features
1. Low On-Resistance: It has a low R_DS(on) resistance, which minimizes power loss and improves efficiency in power management applications.
2. High Drain Current Capability: Capable of handling high drain current, making it suitable for high-power applications.
3. Fast Switching Speed: Provides quick switching capabilities, enhancing performance in applications that require rapid on/off states.
4. Compact Package: Typically available in a compact SOT-23 package, which saves space on circuit boards and is suitable for portable and small devices.
5. Robust Design: Designed to withstand high temperatures and voltages, ensuring reliability and longevity in various environments.
6. Low Gate Charge: This feature reduces the drive requirements, making it easier to control and more efficient in switching applications.
These features make the NTF5P03T3G ideal for use in power management, load switching, and DC-DC conversion applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the source and drain.
2. Drain (D): This is where the load current flows out of the MOSFET. In P-channel MOSFETs, the current flows from source to drain.
3. Source (S): The source is where the current enters the MOSFET. For a P-channel MOSFET, the source is typically connected to a positive voltage.
These pins allow the MOSFET to function as an electronic switch or amplifier within circuits, depending on the application. The specific characteristics, such as on-resistance and maximum current, will be detailed in the datasheet for precise applications.