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NTMFS5C460NLT1G
+BOMMOSFET N-CH 40V 5DFN
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제조업체온세미
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제조업체 부품 #NTMFS5C460NLT1G
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사양
| 속성 | 가치 |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 78A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 4.5mOhm @ 35A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1300 pF @ 20 V |
| Power Dissipation (Max) | 3.6W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
개요
Description
Key features of the NTMFS5C460NLT1G include a low on-state resistance (R_DS(on)), which helps minimize power losses, and a high-speed switching capability that enhances efficiency and performance in dynamic applications. The device is designed to operate at relatively high voltages and currents, making it suitable for both consumer electronics and industrial applications.
The MOSFET is housed in a compact, surface-mount package, facilitating easy integration into printed circuit boards (PCBs) and contributing to space-saving designs. Its robust construction allows the NTMFS5C460NLT1G to perform reliably under varied thermal and electrical conditions, ensuring longevity and stability in critical applications.
Equivalent
1. Vishay SI7456DP – A comparable N-channel MOSFET.
2. Infineon BSC026N04LS – Another suitable alternative.
3. Texas Instruments CSD17573Q5B – Offers similar performance.
When selecting an equivalent, ensure the specifications like voltage, current ratings, and package type match the application requirements. Always verify with the manufacturer's datasheets for compatibility.
Features
1. N-Channel MOSFET: Suitable for high-efficiency switching applications.
2. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 30V.
3. Current Rating: It can handle a continuous drain current (I_D) of up to 96A, depending on the specific thermal conditions.
4. R_DS(on): This device offers a low on-resistance, which minimizes energy loss during operation, contributing to better efficiency.
5. Package: Available in a compact, surface-mount DPAK package, making it ideal for space-constrained designs.
6. Applications: Particularly suited for use in DC-DC converters, load switching, and other power management applications in various electronic devices.
7. Thermal Performance: Designed to operate effectively with minimal heat generation, thanks to its efficient design and packaging.
Overall, the NTMFS5C460NLT1G is engineered for applications requiring reliable, efficient switching capabilities.
Pinout
This device is housed in a compact package, commonly a Power 56 (SO-8FL) or similar, which typically features an 8-pin configuration. The pin count for this MOSFET package is 8, though not all pins may be used for separate functions—some serve to enhance thermal performance or electrical connectivity.
The key functions of its pins are as follows:
- Gate (G): Controls the on/off state of the MOSFET.
- Drain (D): Current flows through this pin when the MOSFET is in the 'on' state.
- Source (S): Current exits through this pin when in the 'on' state.
The exact pin configuration should be verified from the manufacturer's datasheet to ensure precise implementation in a circuit design.
Manufacturer
Application
1. Power Supply Circuits: Used in DC-DC converters and voltage regulators.
2. Motor Control: Helps in driving motors in automotive and industrial applications.
3. Battery Management: Utilized in battery protection and charging circuits.
4. Load Switching: Suitable for efficient switching in electronic devices.
5. Telecommunications Equipment: Ensures efficient power handling in telecom systems.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications, enhancing efficiency and performance.