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NVB190N65S3F
+BOMMOSFET N-CH 650V 20A D2PAK-3
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제조업체온세미
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제조업체 부품 #NVB190N65S3F
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데이터시트 NVB190N65S3F DataSheet
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재고11825
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사양
| 속성 | 가치 |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101, SuperFET® III |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 190mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 430µA |
| Gate Charge(Qg)(Max) @ Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1605 pF @ 400 V |
| Power Dissipation (Max) | 162W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK-3 (TO-263-3) |
개요
Description
Key attributes of the NVB190N65S3F include a low gate charge, which enhances its efficiency by reducing the energy required to switch the device on and off. It also has a minimized gate-to-drain charge, improving its performance in high-frequency applications. The MOSFET is designed to operate with a wide range of gate-source voltages, providing flexibility in various circuits.
Typical applications for the NVB190N65S3F include power supplies, inverters, motor drives, and other systems where high efficiency and reliable performance are critical. Its robust design also ensures durability under demanding conditions, contributing to the overall reliability of the end-product.
Equivalent
1. Infineon's IPW65R045CFD - Similar voltage and current ratings.
2. Vishay's SiHG65N60E - Comparable specifications in terms of voltage, current, and switching performance.
3. STMicroelectronics' STW65N60DM2 - Another alternative with similar features.
It is important to compare specific parameters like on-resistance, gate charge, and thermal characteristics to ensure compatibility with your application. Always consult datasheets for precise matching.
Features
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation by applying a voltage. The gate voltage determines whether the MOSFET is on or off.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the 'on' state. It is connected to the load in most applications.
3. Source (S): This pin is where the main current flows into the MOSFET. It is typically connected to the ground or power source reference.
The NVB190N65S3F is designed for high-efficiency power switching applications and features low on-resistance and fast switching speed. It is primarily used in high-power applications such as power supplies, motor controllers, and inverters.
Manufacturer
Application
1. Switching Power Supplies: Used for converting electrical power efficiently in various electronic devices.
2. Motor Drives: Useful in controlling the speed and torque of motors in industrial and consumer applications.
3. Battery Management Systems: Assists in charging and discharging control for extended battery life.
4. Inverters: Employed in converting DC to AC power, especially in renewable energy systems.
5. Electric Vehicles: Integrated into powertrain systems for efficient energy use and management.
These applications benefit from the MOSFET's low on-resistance and high current handling capabilities.