NVHL020N120SC1

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NVHL020N120SC1

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SICFET N-CH 1200V 103A TO247-3

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사양

속성 가치
Part Status Active
Base Product Number NVHL020
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 203 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 800 V
Power Dissipation (Max) 535W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Packaging Tube

개요

Description

The NVHL020N120SC1 is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in high-voltage switching applications. It is manufactured by ON Semiconductor and is part of their range of power semiconductor devices aimed at improving efficiency and performance in electronic systems.
Key features of the NVHL020N120SC1 include:
1. Voltage and Current Ratings: It typically features a high voltage rating, often around 1200V, suitable for demanding applications, and a continuous current capability that supports high-power operations.
2. Low On-Resistance: This MOSFET offers low on-resistance, which minimizes power loss during operation, contributing to improved efficiency.
3. Rugged Design: The device is designed to withstand high levels of stress in harsh environments, making it ideal for industrial and automotive applications.
4. Fast Switching Speed: It supports fast switching, which reduces energy loss in power conversion systems.
The NVHL020N120SC1 is commonly utilized in applications such as power supplies, motor drives, and inverter circuits, where efficient and reliable power management is critical.

Equivalent

The NVHL020N120SC1 is a 1200V, 20A Silicon Carbide (SiC) MOSFET produced by ON Semiconductor. Equivalent products from other manufacturers might include:
1. C3M0021120K by Wolfspeed
2. SCT3030AL by ROHM Semiconductor
3. APT40SM120B by Microsemi
4. SCT2120AF by ROHM Semiconductor
Please confirm the exact specifications and compatibility before making a substitution, as variations in packaging or performance may exist.

Features

The NVHL020N120SC1 is a silicon carbide (SiC) power MOSFET designed for high-efficiency applications. Here are its key features:
1. Voltage Rating: It has a blocking voltage of 1200 volts, suitable for high-voltage applications.
2. Current Capacity: The device can handle a continuous drain current of up to 20 Amperes.
3. RDS(on): It offers a low on-resistance (RDS(on)) of approximately 80 milliohms, which helps reduce conduction losses.
4. High Efficiency: The SiC technology provides higher efficiency compared to silicon MOSFETs, especially at high frequencies.
5. Fast Switching: It offers fast switching capabilities, which helps in reducing switching losses and improving overall performance.
6. Thermal Performance: Superior thermal performance allows for operation in high-temperature environments, enhancing reliability.
7. Robust Design: It is designed to withstand harsh conditions, offering high durability and longevity.
These features make the NVHL020N120SC1 ideal for applications such as power supplies, motor drives, and renewable energy systems, where efficiency and reliability are critical.

Pinout

The NVHL020N120SC1 is a silicon carbide (SiC) power MOSFET. It typically comes in a TO-247-3 package, which means it has three pins. The pin functions are as follows:
1. Gate: This pin is used to control the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain: This is the pin through which the main current flows when the MOSFET is turned on. It connects to the load in most applications.
3. Source: This pin is the return path for the current flowing through the MOSFET. It is typically connected to the ground or the negative side of the power supply.
These pins enable the MOSFET to function effectively as a switch or amplifier in high-power and high-frequency applications, leveraging the benefits of SiC technology for improved efficiency and thermal performance.

Manufacturer

The NVHL020N120SC1 is manufactured by onsemi, which is a semiconductor company. Onsemi, also known as ON Semiconductor, is a leading supplier in the semiconductor industry, providing a wide range of products including power and signal management, logic, discrete, and custom devices. These components are key in various applications such as automotive, communications, computing, consumer goods, industrial, medical, and aerospace. The company is known for its focus on energy-efficient solutions, which align with modern demands for sustainable and environmentally-friendly technologies.

Application

The NVHL020N120SC1 is a silicon carbide (SiC) MOSFET, and its application areas include high-efficiency power conversion systems such as solar inverters, electric vehicle (EV) powertrains, and battery chargers. It is also used in industrial power supplies, motor drives, and uninterruptible power supplies (UPS) due to its high thermal conductivity, fast switching capabilities, and low power losses. Additionally, it finds application in aerospace and defense systems where high power density and reliability are crucial. Its ability to operate at higher temperatures and voltages makes it suitable for demanding environments and next-generation power electronic systems.

Package

The NVHL020N120SC1 is an Insulated Gate Bipolar Transistor (IGBT) from ON Semiconductor. It is typically housed in a TO-247 package, which is a through-hole type package commonly used for power semiconductor devices.

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