NVMFS5C430NLWFT1G

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NVMFS5C430NLWFT1G

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MOSFET N-CH 40V 200A 5DFN

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  • 제조업체 부품 #NVMFS5C430NLWFT1G

  • 패키지 TDFN-8

  • 재고6049

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사양

속성 가치
Package / Case Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 200A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 1.5mOhm @ 50A, 10V
Vgs(th)(Max) @ Id 2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 70 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 4300 pF @ 20 V
Power Dissipation (Max) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)

개요

Description

The NVMFS5C430NLWFT1G is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in electronic circuits for switching and amplifying signals. This component is typically part of the N-channel MOSFET family, offering characteristics such as low on-resistance and high efficiency, making it suitable for power management applications. It is often used in applications requiring fast switching speeds and high power handling capabilities.
This MOSFET is designed to handle substantial current and voltage levels, making it ideal for use in power converters, motor controllers, battery management systems, and other high-performance electronics. The suffix "G" generally indicates it is a lead-free or RoHS-compliant part, aligning with environmental standards. The device's packaging (indicated by "NLWFT1G") determines its suitability for surface-mount applications, offering advantages like compactness and ease of integration into PCB assemblies.
Key specifications typically include drain-source voltage, continuous drain current, gate threshold voltage, and thermal resistance parameters. Always refer to the manufacturer's datasheet for detailed technical information and to ensure compatibility with your specific application requirements.

Equivalent

The NVMFS5C430NLWFT1G is a MOSFET from ON Semiconductor. Equivalent products would generally come from other manufacturers offering similar N-channel MOSFETs with comparable specifications such as voltage, current ratings, and RDS(on). Potential equivalents include:
1. Infineon's BSC080N06NS
2. Vishay's SI7336ADP
3. STMicroelectronics' STL120N10F7
Always verify the electrical specifications and package types to ensure compatibility.

Features

The NVMFS5C430NLWFT1G is a MOSFET transistor designed by ON Semiconductor. Key features include:
1. Technology: It uses advanced PowerTrench® MOSFET technology for enhanced performance.
2. Configuration: N-channel MOSFET offering low on-resistance.
3. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 62A.
4. Low R_DS(on): Features a low on-resistance, which enhances efficiency by reducing power losses.
5. Thermal Performance: Excellent thermal management capabilities for higher reliability.
6. Package: Comes in a compact and thermally efficient SO-8FL package.
7. Applications: Ideal for load switching, DC-DC converters, motor drives, and power management in portable devices.
8. Protection Features: Built-in ESD protection capabilities for increased device robustness.
These features make the NVMFS5C430NLWFT1G suitable for high-performance and space-constrained applications in various electronic devices.

Pinout

The NVMFS5C430NLWFT1G is a power MOSFET that typically comes in a package with a standard pin configuration. This device is usually found in a flat lead package, like the SO-8FL (or similar), which commonly has 8 pins. The primary function of this MOSFET is to switch and amplify electronic signals in power management applications. It is often used in applications like DC-DC converters, load switching, and other circuits requiring efficient power handling.
In terms of pin configuration, the typical allocation would include:
- Drain (D): Usually multiple pins connected to the drain to handle higher current.
- Source (S): Pins connected to the source terminal.
- Gate (G): Control pin used to turn the MOSFET on and off.
For precise pin count and detailed functions, refer to the datasheet provided by the manufacturer, ON Semiconductor, as the above description is a general guideline.

Manufacturer

The manufacturer of the NVMFS5C430NLWFT1G is ON Semiconductor. ON Semiconductor, also known as onsemi, is a leading supplier of semiconductor-based solutions. The company designs, manufactures, and markets a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. They serve various markets, including automotive, industrial, communications, computing, and consumer electronics. Onsemi focuses on providing energy-efficient innovations and solutions that enable customers to reduce their energy usage and carbon footprint.

Application

The NVMFS5C430NLWFT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. Its primary application areas include:
1. Power Supply Units: Used in power conversion circuits for efficient energy transfer.
2. DC-DC Converters: Ideal for voltage regulation in various electronic devices.
3. Motor Drives: Suitable for controlling motor speed and torque in industrial and automotive applications.
4. Battery Management Systems: Assists in efficient charging and discharging of batteries.
5. Consumer Electronics: Ensures efficient power delivery in devices like laptops and smartphones.
6. Telecommunications: Supports power regulation in network equipment and infrastructure.
These applications leverage its low on-resistance and fast switching capabilities for improved performance and energy efficiency.

Package

The NVMFS5C430NLWFT1G is a MOSFET in a Power DFN (Dual Flat No-lead) package, which is designed for efficient heat dissipation and compact size.

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