사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package | Tray |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) Common Source |
| FETFeature | Silicon Carbide (SiC) |
| DraintoSourceVoltage(Vdss) | 1200V (1.2kV) |
| Current-ContinuousDrain(Id)@25°C | 114A (Tc) |
| RdsOn(Max)@IdVgs | 14mOhm @ 100A, 20V |
| Vgs(th)(Max)@Id | 4.3V @ 40mA |
| GateCharge(Qg)(Max)@Vgs | 454nC @ 20V |
| InputCapacitance(Ciss)(Max)@Vds | 4707pF @ 800V |
| Power-Max | 250W (Tj) |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | Module |
