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PESD3V3V1BL,315
+BOMPESD3V3V1BL - LOW CAPACITANCE BI
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제조업체은지포 반도체
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제조업체 부품 #PESD3V3V1BL,315
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재고2037
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사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Part Status | Active |
개요
Description
Key features of the PESD3V3V1BL,315 include its compact SOD323 package, making it suitable for space-constrained applications. It has a low clamping voltage, ensuring minimal disturbance to the circuit during ESD events. The device can handle ESD pulses up to the IEC 61000-4-2 standard, providing robust protection against high-voltage transients.
Overall, the PESD3V3V1BL,315 is a critical component in modern electronics, particularly in consumer electronics, automotive, and industrial applications where ESD protection is imperative. Its integration helps maintain the functionality and durability of various electronic devices by preventing damage from unexpected electrostatic discharges.
Equivalent
1. NXP PESD3V3V1BA
2. Vishay VESD05A1-HD1-G4-08
3. ON Semiconductor ESD7521N
4. Infineon ESD5V3L1U-02LRH
5. STMicroelectronics ESDARF03-1BM2
These alternatives may have similar specifications, such as breakdown voltage and clamping performance. Always verify specific parameters and compatibility for your application.
Pinout
The PESD3V3V1BL,315 has the following features:
- Pin Count: 2 pins.
- Function: Provides ESD protection by clamping voltage during an ESD event and safely dissipating the ESD energy. The device is designed for protecting high-speed data lines and other sensitive components from damage.
The diode is capable of withstanding ESD pulses according to the IEC 61000-4-2 standard, with a typical breakdown voltage of 3.3 V. It is suitable for use in applications such as USB interfaces, mobile phones, and other portable electronics where space is limited, and robust ESD protection is essential.