PMEG6010AESBYL

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PMEG6010AESBYL

+BOM

DIODE SCHOTTKY 60V 1A DSN1006-2

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사양

속성 가치
Supplier Nexperia USA Inc.
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified(Io) 1A
Voltage - Forward (Vf) (Max) @ If 625 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2.4 ns
Current - Reverse Leakage @ Vr 650 µA @ 60 V
Capacitance @ Vr F 20pF @ 10V, 1MHz
Mounting Type Surface Mount
Supplier Device Package DSN1006-2

개요

Description

PMEG6010AESBYL is a N-channel power MOSFET from Nexperia’s PMEG series. It’s a 60‑V enhancement‑mode transistor designed as a switching element in power-management circuits, such as DC‑DC converters and load/high‑side switches. The device comes in a small surface-mount package (Pb‑free/leadless finish; suffix L). Benefits include low gate-drive requirements, low on-resistance for efficient switching, fast switching speed, and good ruggedness for pulsed currents. Typical applications: switching regulators, protection blocks, and general power-switching in portable electronics. For exact electrical specs (VDS, ID, RDS(on), Vgsth, capacitances), thermal data, and packaging details, consult the official PMEG6010AESBYL datasheet from Nexperia.

Features

Here are the key features of PMEG6010AESBYL (concise):
- P-channel enhancement-mode power MOSFET
- VDS: 60 V (high-side switching capability)
- Package: small SOT-23 (SC-59) with Pb-free/RoHS-compliant
- Low gate-drive requirement: suitable for logic-level drive
- Low RDS(on) for efficient conduction
- Low gate charge for fast switching
- Robust switching performance with good dv/dt handling
- Avalanche-rated for inductive-load protection
- Suitable for load-switching, polarity protection, and other high-side applications
Note: For exact electrical parameters (RDS(on) values, gate thresholds, max IDS, etc.), please consult the official datasheet.

Pinout

Pin count: 2 pins — Anode and Cathode.
Function: PMEG6010AESBYL is a Schottky barrier diode used for low‑forward‑voltage rectification and reverse‑voltage blocking (polarity protection, freewheeling/clamping, and power‑supply rectification).

Manufacturer

- Manufacturer: Nexperia.
- What kind of company: A global semiconductor company specializing in discrete components (diodes, transistors/MOSFETs, and protection devices like ESD diodes) for automotive, industrial, and consumer markets.

Application

PMEG6010AESBYL is used as an ESD/transient protection diode. Typical application areas:
- ESD and surge protection for I/O lines and supply rails
- High-speed interfaces: USB, HDMI/DisplayPort, LVDS, PCIe, Ethernet
- Protecting microcontrollers, sensors, memories, and other sensitive ICs
- Mobile devices, wearables, laptops, desktops, and peripherals
- Automotive and industrial electronics, embedded systems, and consumer electronics
Note: designed for board-level protection in compact, high-density layouts.

Package

PMEG6010AESBYL is supplied in an SOD523 (SOD‑523) surface-mount package.

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