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PSMN4R0-60YS
+BOMMOSFETs
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제조업체Nexperia
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제조업체 부품 #PSMN4R0-60YS
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재고27056
365 1일 품질 보증
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사양
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개요
Description
The PSMN4R0-60YS is a 60V, 4.0mΩ N-channel MOSFET from Nexperia, designed for high-efficiency power switching applications. Key features include:
- Low on-resistance (RDS(on)): Minimizes conduction losses.
- High current handling: Supports up to 300A (pulsed).
- Optimized for automotive & industrial use: AEC-Q101 qualified for reliability.
- Fast switching: Suitable for DC-DC converters, motor drives, and battery management.
- Thermally enhanced D2PAK (TO-263) package: Improves heat dissipation.
Ideal for high-power, low-voltage systems requiring robust performance and energy efficiency.
- Low on-resistance (RDS(on)): Minimizes conduction losses.
- High current handling: Supports up to 300A (pulsed).
- Optimized for automotive & industrial use: AEC-Q101 qualified for reliability.
- Fast switching: Suitable for DC-DC converters, motor drives, and battery management.
- Thermally enhanced D2PAK (TO-263) package: Improves heat dissipation.
Ideal for high-power, low-voltage systems requiring robust performance and energy efficiency.
Equivalent
Equivalent products to the PSMN4R0-60YS (60V, 4.0mΩ N-channel MOSFET) include:
- Infineon IPB65R060C7 (60V, 6.0mΩ)
- STMicroelectronics STL160N6F7 (60V, 6.0mΩ)
- Vishay SiR626DP (60V, 6.2mΩ)
- ON Semiconductor NVMFS5C604NL (60V, 6.0mΩ)
These alternatives offer similar voltage and resistance ratings but may vary in package, thermal performance, or switching characteristics. Always verify datasheet compatibility.
- Infineon IPB65R060C7 (60V, 6.0mΩ)
- STMicroelectronics STL160N6F7 (60V, 6.0mΩ)
- Vishay SiR626DP (60V, 6.2mΩ)
- ON Semiconductor NVMFS5C604NL (60V, 6.0mΩ)
These alternatives offer similar voltage and resistance ratings but may vary in package, thermal performance, or switching characteristics. Always verify datasheet compatibility.
Features
The PSMN4R0-60YS is a 60V N-channel MOSFET with the following key features:
- Low On-Resistance (RDS(on)): 4.0 mΩ (max) at VGS = 10V, enhancing efficiency.
- High Current Handling: 60A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications.
- Low Gate Charge (Qg): Reduces switching losses.
- Avalanche Rated: Robust against transient voltage spikes.
- Thermally Enhanced D2PAK (TO-263) Package: Improves heat dissipation.
- Logic-Level Gate Drive: Compatible with 5V drive signals.
Ideal for power supplies, motor control, and DC-DC converters.
- Low On-Resistance (RDS(on)): 4.0 mΩ (max) at VGS = 10V, enhancing efficiency.
- High Current Handling: 60A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications.
- Low Gate Charge (Qg): Reduces switching losses.
- Avalanche Rated: Robust against transient voltage spikes.
- Thermally Enhanced D2PAK (TO-263) Package: Improves heat dissipation.
- Logic-Level Gate Drive: Compatible with 5V drive signals.
Ideal for power supplies, motor control, and DC-DC converters.
Pinout
The PSMN4R0-60YS is a 60V, 4.0mΩ N-channel MOSFET in a LFPAK56 (Power-SO8) package.
- Pin Count: 5 pins (though the package may appear as 8-pad, only 5 are functional).
- Key Functions:
- Gate (G): Controls switching.
- Drain (D): High-current terminal (connected to multiple pins for thermal/electrical performance).
- Source (S): Current return path.
- Kelvin Source (Sₖ): Improves switching accuracy by reducing parasitic inductance.
Designed for high-efficiency power conversion (e.g., DC-DC, motor drives), it features low RDS(on) and fast switching.
- Pin Count: 5 pins (though the package may appear as 8-pad, only 5 are functional).
- Key Functions:
- Gate (G): Controls switching.
- Drain (D): High-current terminal (connected to multiple pins for thermal/electrical performance).
- Source (S): Current return path.
- Kelvin Source (Sₖ): Improves switching accuracy by reducing parasitic inductance.
Designed for high-efficiency power conversion (e.g., DC-DC, motor drives), it features low RDS(on) and fast switching.
Manufacturer
The PSMN4R0-60YS is a power MOSFET manufactured by Nexperia, a leading semiconductor company specializing in high-performance discrete, logic, and MOSFET devices.
Nexperia, originally a division of Philips and later part of NXP Semiconductors, became an independent company in 2017. It focuses on efficiency, reliability, and miniaturization, serving industries like automotive, industrial, and consumer electronics.
The PSMN4R0-60YS is part of Nexperia’s LFPAK56 package lineup, optimized for low on-resistance and high power efficiency.
Nexperia, originally a division of Philips and later part of NXP Semiconductors, became an independent company in 2017. It focuses on efficiency, reliability, and miniaturization, serving industries like automotive, industrial, and consumer electronics.
The PSMN4R0-60YS is part of Nexperia’s LFPAK56 package lineup, optimized for low on-resistance and high power efficiency.
Package
The PSMN4R0-60YS is a power MOSFET in a TO-263 (D2PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance with a low on-resistance (RDS(on)). It is commonly used in switching power supplies, motor control, and other high-current circuits. The TO-263 package includes a metal tab for heat dissipation.
