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제조업체Nexperia
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제조업체 부품 #PSMN6R1-30YLD
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사양
| 속성 | 가치 |
| Brand | Nexperia |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
| Mounting Type | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) |
개요
Description
Understanding the specifications and characteristics of PSMN6R1-30YLD is crucial for engineers and designers, as it informs decisions regarding material selection, design parameters, and overall product reliability. For detailed information, including technical data sheets or application guidelines, consulting the manufacturer's documentation or technical support would be advisable.
Equivalent
Features
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Capable of handling continuous drain currents up to 30A.
3. R_DS(on): Low on-resistance, generally around 1.6 mΩ at V_GS = 10V, enhancing efficiency and reducing heat generation.
4. High-Speed Switching: Suitable for fast switching applications, making it ideal for power management circuits.
5. Package Type: Usually available in a DPAK or similar package, facilitating heat dissipation and easy integration into circuits.
6. Thermal Performance: Capable of operation in high-temperature environments, with a maximum junction temperature of 150°C.
7. Applications: Commonly used in DC-DC converters, power supplies, and motor drives.
This MOSFET is well-suited for both consumer electronics and industrial applications, providing reliability and efficiency.
Pinout
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the circuit.
The specific functionalities of each pin allow the MOSFET to act as a switch or amplifier in various applications, including power management and signal processing. The PSMN6R1-30YLD is designed for high-efficiency switching applications with low on-resistance and fast switching characteristics.