사양
| 속성 | 가치 |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tape & Reel (TR) |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector(Ic)(Max) | 800 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Resistor - Base(R1) | 2.2 kOhms |
| Resistor - Emitter Base(R2) | 2.2 kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 65 @ 100mA, 1V |
| Vce Saturation(Max) @ Ib Ic | 250mV @ 1mA, 50mA |
| Current - Collector Cutoff(Max) | 500nA |
| Frequency - Transition | 300 MHz |
| Power - Max | 200 mW |
| Mounting Type | Surface Mount |
