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S29GL512S10DHI010
+BOMS29GL512S - 512-Mbit (64 Mbyte),
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제조업체넥스페리아 USA 주식회사
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제조업체 부품 #S29GL512S10DHI010
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재고7206
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Part Status | Active |
개요
Description
Key features include fast read access times, typically around 90 nanoseconds, and an endurance of up to 100,000 program/erase cycles, ensuring long-term reliability and durability. The device supports both asynchronous and synchronous read operations, providing flexibility for different use cases. It also includes common flash interface (CFI) support, which allows for easy integration with numerous system designs.
The S29GL512S10DHI010 is typically used in automotive, industrial, and consumer electronics where robust and high-density storage solutions are required. It features Secure Silicon Block (SSB) for security and flexibility, as well as simultaneous read/write operations to optimize performance. Its packaging and design are optimized to withstand demanding environmental conditions, making it suitable for a wide range of applications.
Equivalent
Features
1. Density: 512 Megabits (64 Megabytes).
2. Voltage: Operates at a single 3.0V supply for read, erase, and program operations.
3. Speed: Offers a read speed of 100 ns, making it suitable for high-performance applications.
4. Architecture: Organized in a uniform 64-KB sector with capabilities for both top and bottom boot sectors.
5. Interface: Supports a standard Async interface.
6. Endurance: Provides a typical endurance of 100,000 program/erase cycles per sector.
7. Data Retention: Ensures data retention of 20 years.
8. Security: Features include password protection, a secured silicon sector, and additional hardware protection mechanisms.
9. Package: Available in various packages, including the 56-lead TSOP package.
This device is used in applications requiring reliable, non-volatile memory storage such as in automotive, networking, and industrial systems.
Pinout
The pin count varies by package:
- TSOP: 56 pins
- FBGA: 64 balls
Key functions of the pins include:
- Address Pins (A): Used to address memory locations.
- Data Pins (DQ): Bidirectional pins used for input and output of data.
- Control Pins: Include Chip Enable (CE#), Output Enable (OE#), Write Enable (WE#), and Reset (RESET#) for controlling device operations.
- Power Pins (VCC, VSS): Provide power and ground connections.
- Reserved and No Connect Pins: Certain pins are reserved or not connected, depending on the design.
This NOR Flash memory is used for high-speed random access and execution-in-place (XIP) applications, making it suitable for code storage in embedded systems like automotive and industrial applications.
Manufacturer
Cypress specializes in providing solutions for embedded systems, automotive, industrial, and consumer electronics applications. The company's products are used in a variety of devices and systems, ranging from automotive infotainment and advanced driver assistance systems (ADAS) to IoT devices and consumer electronics.
In 2020, Cypress Semiconductor was acquired by Infineon Technologies, a German semiconductor manufacturer, which expanded its portfolio and reach in the global semiconductor market. Infineon is known for its focus on automotive, industrial power control, power management, and digital security solutions. The acquisition has allowed Infineon to integrate Cypress’s expertise in NOR Flash and microcontroller technology into its broader product offerings.
Application
1. Embedded Systems: Used in devices like industrial controllers and automotive systems for firmware storage.
2. Consumer Electronics: Found in products like digital cameras and set-top boxes for data retention.
3. Networking Equipment: Utilized for storing software and configuration files in routers and switches.
4. Medical Devices: Provides reliable data storage for critical applications.
5. Telecommunications: Used in base stations and other infrastructure for configuration and control code storage.
These applications benefit from its high-speed read and write capabilities, along with robust data retention and endurance.