S34ML01G100BHI000

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S34ML01G100BHI000

+BOM

IC FLASH 1GBIT PARALLEL 63BGA

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치
Series ML-1
PartStatus Active
DigiKeyProgrammable Not Verified
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 1Gbit
MemoryOrganization 128M x 8
MemoryInterface Parallel
WriteCycleTime-Word,Page 25ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA
SupplierDevicePackage 63-BGA (11x9)
BaseProductNumber S34ML01

개요

Description

The S34ML01G100BHI000 is a NAND flash memory chip produced by Cypress Semiconductor, part of the S34ML series. It features a 1 Gigabit (128 MB) density and is designed for high-performance applications, including consumer electronics, automotive, and industrial devices. The chip utilizes a Serial Peripheral Interface (SPI) for efficient data transfer and low power consumption.
Key attributes include:
- Architecture: It typically employs a multi-level cell (MLC) or triple-level cell (TLC) structure, enhancing storage capacity while balancing performance and endurance.
- Performance: Offers fast read and write speeds, making it suitable for applications requiring quick data access.
- Durability: Built to withstand numerous write/erase cycles, ensuring longevity and reliability in demanding environments.
- Interface: SPI interface simplifies integration into various systems and allows for easier communication with microcontrollers and processors.
The S34ML01G100BHI000 is a versatile solution for applications requiring compact, reliable, and efficient storage solutions.

Equivalent

The S34ML01G100BHI000 chip, a 1 Gb (128 MB) NAND Flash memory from Cypress, has equivalent products from various manufacturers. Alternatives include Micron MT29F1G01ABAEAWP, Samsung K9GAG08U0M, and Sk Hynix H26M31001GMR. Always verify compatibility regarding voltage, pin configuration, and specifications before substitution.

Features

The S34ML01G100BHI000 is a 1 Gbit NAND Flash memory device from Cypress Semiconductor, part of the S34ML series. Key features include:
1. Technology: Multi-level cell (MLC) NAND Flash, offering a balance between performance and density.
2. Interface: Supports asynchronous and synchronous interfaces, enabling flexible integration into various systems.
3. Density: 1 Gbit memory capacity, suitable for a range of applications.
4. Package: Available in a compact 48-ball FBGA package for space-constrained designs.
5. Read/Write Speed: High-speed read and write capabilities, enhancing overall system performance.
6. Endurance: Designed for high endurance, allowing a significant number of program/erase cycles.
7. Data Retention: Provides reliable data retention for extended periods, essential for non-volatile memory applications.
8. Power Management: Low power consumption in both active and standby modes, suitable for battery-operated devices.
These features make the S34ML01G100BHI000 ideal for applications in consumer electronics, industrial, and automotive sectors.

Pinout

The S34ML01G100BHI000 is a 1-Gbit (128 MB) NAND flash memory device from Cypress Semiconductor (now part of Infineon Technologies). It features a standard 40-pin TSOP (Thin Small Outline Package) configuration.
The key functions of the pins include:
- Data Pins (D0-D7): Used for data input/output.
- Command Pins (CE, RE, WE): Control the chip enable, read enable, and write enable operations.
- Address Pins (A0-A19): Used to select the specific memory location within the chip.
- Status Pins (R/B): Provide status feedback regarding operation completion.
- VCC and VSS Pins: Supply power and ground connections for the device.
The device supports asynchronous memory operation, making it suitable for various applications, including embedded systems and consumer electronics. Its architecture allows for efficient and reliable data storage.

Manufacturer

The S34ML01G100BHI000 is manufactured by Micron Technology, Inc. Micron is a prominent American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for producing a variety of memory products, including DRAM (Dynamic Random-Access Memory), NAND flash memory, and solid-state drives (SSDs).
The S34ML01G100BHI000 is a NAND flash memory chip, specifically designed for use in embedded applications, which are common in consumer electronics, automotive systems, and industrial devices. Micron is a key player in the memory sector and contributes significantly to advancements in technology, focusing on innovation in memory and storage solutions to meet the demands of various markets, including mobile devices, computing, and data center applications. The company emphasizes sustainability and strives to enhance the performance and efficiency of its products while maintaining high standards of quality and reliability.

Application

The S34ML01G100BHI000 is a 1 Gb (gigabit) NAND Flash memory device. Its application areas include mobile devices (smartphones and tablets), consumer electronics, embedded systems, and automotive applications. It is commonly used for data storage in applications requiring high-speed read and write operations, such as firmware storage, multimedia content, and operating systems. Additionally, it is suitable for industrial applications where reliability and durability are critical.

Package

The S34ML01G100BHI000 is packaged in a TSOP (Thin Small Outline Package) type, specifically a TSOP-I. This package type is designed for high-density memory chips, offering a compact footprint suitable for various electronic applications.

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