S34MS01G200GHI000

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S34MS01G200GHI000

+BOM

IC FLASH 1GBIT PARALLEL 67BGA

  • 제조업체세프라스 반도체 회사

  • 제조업체 부품 #S34MS01G200GHI000

  • 패키지 VFBGA-67

  • 재고3799

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치
Package / Case Tray,Tray
Series MS-2
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gb (128M x 8)
Memory Interface Parallel
Write Cycle Time - Word Page 45ns
Access Time 45 ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

개요

Description

The S34MS01G200GHI000 is a NAND Flash memory device produced by Cypress Semiconductor. It is designed for applications requiring high-density storage, such as in mobile devices, consumer electronics, and industrial systems. This chip provides a memory capacity of 1 gigabit and features a standard NAND Flash interface, facilitating integration with a wide range of microcontrollers and processors.
Key features of the S34MS01G200GHI000 include a high-speed read-write performance, low power consumption, and enhanced endurance and reliability, making it suitable for intensive read/write operations and extended use. The device supports necessary error correction mechanisms, ensuring data integrity during storage and retrieval.
The S34MS01G200GHI000 operates within a wide temperature range, making it adaptable for various environmental conditions. Its compact package size is beneficial for space-constrained applications, while its compatibility with industry standards ensures ease of use in design and development processes. Overall, the S34MS01G200GHI000 is a versatile and reliable choice for applications requiring robust and efficient NAND Flash memory solutions.

Equivalent

The S34MS01G200GHI000 is a 1Gb NAND Flash memory chip. Equivalent products include:
1. Micron MT29F1G08ABADAWP: A 1Gb NAND Flash chip from Micron.
2. Toshiba TC58NVG1S3HTA00: A similar 1Gb NAND Flash memory from Toshiba.
3. Samsung K9F1G08U0D: A 1Gb NAND Flash memory chip from Samsung.
These products are comparable in terms of capacity and function, but differences in performance and specific features may exist. Always check datasheets for compatibility.

Features

The S34MS01G200GHI000 is a NAND Flash memory chip designed for high-density data storage applications. It features a storage capacity of 1 Gbit (128 MB) and utilizes a single-level cell (SLC) architecture, which enhances its reliability and endurance compared to multi-level cell (MLC) designs. This memory chip operates with a 3.3V power supply and supports a parallel NAND interface for fast data transfer rates.
Key features include:
1. High Endurance: Thanks to the SLC technology, the chip provides a high program/erase cycle count, making it suitable for industrial and embedded applications.
2. Fast Performance: It offers rapid read and write operations, essential for applications requiring quick access to data.
3. Error Correction: Built-in error correction mechanisms improve data integrity and reliability.
4. Operating Temperature Range: Well-suited for various environments, it typically supports a wide operating temperature range.
5. Compact Package: Its compact form factor makes it ideal for space-constrained applications.
These features make the S34MS01G200GHI000 ideal for devices requiring robust and reliable memory solutions.

Pinout

The S34MS01G200GHI000 is a NAND Flash memory chip manufactured by Cypress Semiconductor, now part of Infineon Technologies. It typically comes in a TSOP (Thin Small Outline Package) with 48 pins.
The primary functions of the pins are as follows:
- Data I/O Pins (DQ0-DQ7): These are used for input and output of data.
- Address Latch Enable (ALE): Used to latch the address input.
- Command Latch Enable (CLE): Used to latch the command input.
- Chip Enable (CE#): Enables the chip for reading or writing.
- Write Enable (WE#): Controls the writing process.
- Read Enable (RE#): Controls the reading process.
- Ready/Busy (R/B#): Indicates the status of the device (ready or busy).
- Write Protect (WP#): Protects the device from inadvertent writes.
- Power Supply Pins (VCC, VSS): Provide power and ground connections.
These pins allow the memory chip to perform operations such as reading, writing, and erasing data, essential for its role in storing data in embedded systems and other applications.

Manufacturer

The S34MS01G200GHI000 is a NAND flash memory chip manufactured by Infineon Technologies. Infineon is a German semiconductor company that develops various semiconductor solutions for automotive, industrial, and multi-market sectors. The company is known for its innovation in power systems, sensors, and security technologies. Infineon's product portfolio includes microcontrollers, power semiconductors, sensors, and embedded systems, serving industries like automotive, industrial, communication, and consumer electronics.

Application

The S34MS01G200GHI000 is a NAND Flash memory chip commonly used in various applications such as consumer electronics, industrial devices, and automotive systems. It is utilized for data storage in smartphones, tablets, and cameras, providing reliable and high-density storage. In industrial settings, it supports data logging and system updates for embedded systems and IoT devices. In automotive applications, it is used for infotainment systems, navigation, and firmware updates. Additionally, it serves in networking equipment and enterprise storage solutions, offering efficient and scalable memory solutions. Its non-volatile nature ensures data retention even without power, making it versatile for diverse applications requiring robust data storage.

Package

The S34MS01G200GHI000 is a 1 Gb NAND Flash Memory device manufactured by Cypress Semiconductor (now part of Infineon Technologies). It typically comes in a TSOP (Thin Small Outline Package) type, specifically a 48-pin TSOP I package, which is common for memory components.

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