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SIC MOSFET
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #SCT020H120G3AG
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재고6632
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사양
| 속성 | 가치 |
| Series | ECOPACK® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 2.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 121 nC @ 18 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3465 pF @ 800 V |
| Power Dissipation (Max) | 555W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
개요
Description
The SCT020H120G3AG is a high-performance silicon carbide (SiC) MOSFET designed for power electronics applications. This device is part of the second generation of SiC MOSFETs, offering enhanced efficiency and thermal performance compared to traditional silicon devices. With a voltage rating of 1200V and a current rating of 20A, it is suitable for demanding applications such as industrial power supplies, renewable energy systems, electric vehicles, and high-frequency switching applications.
Key features include low on-resistance, fast switching speeds, and high thermal conductivity, which improve overall system efficiency and reduce cooling requirements. The SCT020H120G3AG is housed in a TO-247 package, facilitating easy installation and heat dissipation. Additionally, its robust design ensures reliability under harsh operating conditions. Overall, this SiC MOSFET represents a significant advancement in power semiconductor technology, enabling more compact and efficient designs in modern power electronics.
Key features include low on-resistance, fast switching speeds, and high thermal conductivity, which improve overall system efficiency and reduce cooling requirements. The SCT020H120G3AG is housed in a TO-247 package, facilitating easy installation and heat dissipation. Additionally, its robust design ensures reliability under harsh operating conditions. Overall, this SiC MOSFET represents a significant advancement in power semiconductor technology, enabling more compact and efficient designs in modern power electronics.
Equivalent
The SCT020H120G3AG is a 1200V, 20A SiC MOSFET. Equivalent products include:
1. Cree/Wolfspeed C3M0120120K
2. Infineon FF120R12KT4
3. Vishay SiC MOSFETs (e.g., SiC12M120)
4. ON Semiconductor NGTB20N120SDF
5. STMicroelectronics STPSC1206
Always confirm specifications and performance characteristics for compatibility in your application.
1. Cree/Wolfspeed C3M0120120K
2. Infineon FF120R12KT4
3. Vishay SiC MOSFETs (e.g., SiC12M120)
4. ON Semiconductor NGTB20N120SDF
5. STMicroelectronics STPSC1206
Always confirm specifications and performance characteristics for compatibility in your application.
Features
The SCT020H120G3AG is a silicon carbide (SiC) MOSFET designed for high-performance power applications. Key features include:
1. Voltage Rating: Supports 1200V operations, making it suitable for medium-to-high voltage applications.
2. Current Rating: Delivers a continuous drain current of up to 20A, enhancing its capability for demanding applications.
3. Low On-Resistance: Provides low R_DS(on) values, which contribute to improved efficiency and reduced power losses during operation.
4. Fast Switching Speed: Enables high-frequency operation, ideal for applications such as inverters, converters, and power supplies.
5. Thermal Stability: Excellent thermal performance due to its SiC substrate, facilitating better heat dissipation and reliability.
6. Gate Drive Voltage: Compatible with standard gate drive voltages, simplifying integration into existing designs.
7. Robustness: Designed to withstand harsh environments, making it suitable for industrial and automotive applications.
Overall, the SCT020H120G3AG is an efficient choice for advanced power electronics, enhancing performance and energy savings.
1. Voltage Rating: Supports 1200V operations, making it suitable for medium-to-high voltage applications.
2. Current Rating: Delivers a continuous drain current of up to 20A, enhancing its capability for demanding applications.
3. Low On-Resistance: Provides low R_DS(on) values, which contribute to improved efficiency and reduced power losses during operation.
4. Fast Switching Speed: Enables high-frequency operation, ideal for applications such as inverters, converters, and power supplies.
5. Thermal Stability: Excellent thermal performance due to its SiC substrate, facilitating better heat dissipation and reliability.
6. Gate Drive Voltage: Compatible with standard gate drive voltages, simplifying integration into existing designs.
7. Robustness: Designed to withstand harsh environments, making it suitable for industrial and automotive applications.
Overall, the SCT020H120G3AG is an efficient choice for advanced power electronics, enhancing performance and energy savings.
Pinout
The SCT020H120G3AG is a silicon carbide (SiC) MOSFET with a pin count of 4. Its primary functions are in power switching applications, such as inverters, power supplies, and motor drives, benefiting from its high efficiency and fast switching capabilities.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connected to the load.
3. Source (S) - Connected to the ground or negative supply.
This device is designed for high-voltage applications, with a maximum voltage rating of 1200V and a current rating of up to 20A, making it suitable for various high-performance power electronics applications. Its efficiency and thermal performance are advantageous for reducing system size and improving reliability.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connected to the load.
3. Source (S) - Connected to the ground or negative supply.
This device is designed for high-voltage applications, with a maximum voltage rating of 1200V and a current rating of up to 20A, making it suitable for various high-performance power electronics applications. Its efficiency and thermal performance are advantageous for reducing system size and improving reliability.
Manufacturer
The SCT020H120G3AG is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics is a leading manufacturer of a wide range of electronic components, including microcontrollers, power management ICs, and various types of discrete and integrated circuits.
The company serves multiple sectors, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation in semiconductor technology and focuses on developing solutions that enable energy efficiency and connectivity in applications like IoT (Internet of Things), smart devices, and automotive electronics.
With a strong emphasis on research and development, STMicroelectronics plays a crucial role in advancing technologies that support sustainable and efficient electronic systems. Their products are integral to various applications, promoting advancements in smart technologies and environmental sustainability.
The company serves multiple sectors, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation in semiconductor technology and focuses on developing solutions that enable energy efficiency and connectivity in applications like IoT (Internet of Things), smart devices, and automotive electronics.
With a strong emphasis on research and development, STMicroelectronics plays a crucial role in advancing technologies that support sustainable and efficient electronic systems. Their products are integral to various applications, promoting advancements in smart technologies and environmental sustainability.
Application
The SCT020H120G3AG is a silicon carbide (SiC) MOSFET commonly used in power electronics applications. Its primary application areas include:
1. Electric Vehicles: For traction inverters and battery management systems.
2. Renewable Energy: Inverters for solar and wind energy systems.
3. Industrial Drives: Motor control and variable frequency drives (VFDs).
4. Power Supplies: High-efficiency power converters and switching power supplies.
5. Data Centers: Power management in server and data center applications due to its efficiency and thermal performance.
These applications leverage the device's high efficiency, thermal conductivity, and fast switching capabilities.
1. Electric Vehicles: For traction inverters and battery management systems.
2. Renewable Energy: Inverters for solar and wind energy systems.
3. Industrial Drives: Motor control and variable frequency drives (VFDs).
4. Power Supplies: High-efficiency power converters and switching power supplies.
5. Data Centers: Power management in server and data center applications due to its efficiency and thermal performance.
These applications leverage the device's high efficiency, thermal conductivity, and fast switching capabilities.
Package
The SCT020H120G3AG is packaged in a TO-247 format, which is a common package type for high-power semiconductor devices. This package allows for efficient thermal management and is suitable for applications in power electronics, such as inverters and converters.
