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SCT040W120G3-4AG
+BOMTO247-4
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제조업체ST마이크로일렉트로닉스(주)
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제조업체 부품 #SCT040W120G3-4AG
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사양
| 속성 | 가치 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 16A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 800 V |
| Power Dissipation (Max) | 312W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
개요
Description
The SCT040W120G3-4AG is a Silicon Carbide (SiC) MOSFET designed for high-efficiency power conversion applications. Manufactured by ROHM Semiconductor, this component is part of their cutting-edge SiC technology, offering improved performance over traditional silicon MOSFETs. Key features include a 1200V rating, enabling it to handle high voltage applications, and a low on-resistance, which minimizes power losses and enhances overall efficiency. Additionally, its fast switching capabilities reduce energy loss during transitions, making it suitable for applications such as power supplies, inverters, and motor drives. The device's robust design is ideal for high-temperature environments, providing reliability and longevity in demanding conditions. Overall, the SCT040W120G3-4AG is a powerful solution for designers seeking to optimize the efficiency and performance of their power electronics systems.
Equivalent
The SCT040W120G3-4AG is a SiC MOSFET from ROHM Semiconductor. Equivalent products include:
1. Wolfspeed C3M0120090J
2. Infineon IMZA120R030M1H
3. ON Semiconductor NVHL080N120SC1
4. STMicroelectronics SCTW100N120G2V4
These alternatives offer similar voltage and current ratings and are used in high-efficiency power conversion applications. Always check specific datasheets for compatibility in your application.
1. Wolfspeed C3M0120090J
2. Infineon IMZA120R030M1H
3. ON Semiconductor NVHL080N120SC1
4. STMicroelectronics SCTW100N120G2V4
These alternatives offer similar voltage and current ratings and are used in high-efficiency power conversion applications. Always check specific datasheets for compatibility in your application.
Features
The SCT040W120G3-4AG is a third-generation silicon carbide (SiC) MOSFET designed for high efficiency and performance in power electronics applications. Key features include:
1. Voltage & Current Ratings: It typically offers a breakdown voltage of 1200V, suitable for high-voltage applications.
2. Low On-Resistance: The device features low on-resistance, minimizing conduction losses and improving efficiency.
3. High-Speed Switching: Capable of fast switching speeds, which reduces switching losses and enhances performance in high-frequency applications.
4. Thermal Performance: Its SiC technology provides superior thermal performance compared to traditional silicon MOSFETs, allowing for operation at higher temperatures.
5. Ruggedness: The MOSFET is designed for high robustness and reliability in demanding environments.
6. Compact Package: Typically available in a compact package to save space on the PCB.
These features make the SCT040W120G3-4AG ideal for applications such as renewable energy systems, power supplies, and electric vehicle systems where efficiency and thermal management are critical.
1. Voltage & Current Ratings: It typically offers a breakdown voltage of 1200V, suitable for high-voltage applications.
2. Low On-Resistance: The device features low on-resistance, minimizing conduction losses and improving efficiency.
3. High-Speed Switching: Capable of fast switching speeds, which reduces switching losses and enhances performance in high-frequency applications.
4. Thermal Performance: Its SiC technology provides superior thermal performance compared to traditional silicon MOSFETs, allowing for operation at higher temperatures.
5. Ruggedness: The MOSFET is designed for high robustness and reliability in demanding environments.
6. Compact Package: Typically available in a compact package to save space on the PCB.
These features make the SCT040W120G3-4AG ideal for applications such as renewable energy systems, power supplies, and electric vehicle systems where efficiency and thermal management are critical.
Pinout
The SCT040W120G3-4AG is a silicon carbide (SiC) power MOSFET manufactured by ROHM Semiconductor. It typically comes in a TO-247 package, which generally has three pins. These three pins are:
1. Gate (G): This pin is used to control the MOSFET, turning it on or off by applying the appropriate voltage.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the on state.
3. Source (S): This pin is the return path for the current flowing through the drain when the MOSFET is conducting.
The primary function of the SCT040W120G3-4AG is to serve as a switch or amplifier in power electronics applications, offering benefits like high efficiency, faster switching speeds, and reduced losses, thanks to its silicon carbide technology. These features make it particularly suitable for high-power applications such as inverters, power supplies, and electric vehicle systems.
1. Gate (G): This pin is used to control the MOSFET, turning it on or off by applying the appropriate voltage.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the on state.
3. Source (S): This pin is the return path for the current flowing through the drain when the MOSFET is conducting.
The primary function of the SCT040W120G3-4AG is to serve as a switch or amplifier in power electronics applications, offering benefits like high efficiency, faster switching speeds, and reduced losses, thanks to its silicon carbide technology. These features make it particularly suitable for high-power applications such as inverters, power supplies, and electric vehicle systems.
Manufacturer
The SCT040W120G3-4AG is manufactured by ROHM Semiconductor. ROHM is a global company that specializes in designing and manufacturing a wide range of electronic components. It is known for producing semiconductors, integrated circuits (ICs), discrete components, optoelectronics, and power semiconductors. The company serves various industries, including automotive, consumer electronics, industrial equipment, and telecommunications, providing essential components for modern electronic systems. ROHM is recognized for its commitment to quality, innovation, and sustainable practices in the electronics manufacturing industry.
Application
The SCT040W120G3-4AG is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion applications. Its primary application areas include:
1. Renewable Energy Systems: Used in solar inverters and wind power converters for efficient energy conversion.
2. Electric Vehicles (EVs): Applied in traction inverters and onboard chargers to enhance power efficiency and reduce system size.
3. Industrial Power Supplies: Utilized in motor drives and power supply units to improve performance and reliability.
4. Data Centers: Helps in power factor correction and voltage regulation for better energy efficiency.
Its high switching speed, low losses, and high-temperature capability make it ideal for these applications.
1. Renewable Energy Systems: Used in solar inverters and wind power converters for efficient energy conversion.
2. Electric Vehicles (EVs): Applied in traction inverters and onboard chargers to enhance power efficiency and reduce system size.
3. Industrial Power Supplies: Utilized in motor drives and power supply units to improve performance and reliability.
4. Data Centers: Helps in power factor correction and voltage regulation for better energy efficiency.
Its high switching speed, low losses, and high-temperature capability make it ideal for these applications.
Package
The SCT040W120G3-4AG is a silicon carbide (SiC) MOSFET housed in a TO-247-4 package. This type of package is designed for high-power applications, providing enhanced thermal performance and efficiency. The TO-247-4 package includes a Kelvin source connection that minimizes inductance, improving switching performance.
