SGL160N60UFDTU

이미지는 참조용입니다.

SGL160N60UFDTU

+BOM

IGBT 600V 160A 250W TO264

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Package Tube
ProductStatus Last Time Buy
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 160 A
Current-CollectorPulsed(Icm) 300 A
Vce(on)(Max)@VgeIc 2.6V @ 15V, 80A
Power-Max 250 W
SwitchingEnergy 2.5mJ (on), 1.76mJ (off)
InputType Standard
GateCharge 345 nC
Td(on/off)@25°C 40ns/90ns
TestCondition 300V, 80A, 3.9Ohm, 15V
ReverseRecoveryTime(trr) 95 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-264-3, TO-264AA

개요

Description

The SGL160N60UFDTU is a semiconductor component, specifically an Insulated Gate Bipolar Transistor (IGBT) produced by ON Semiconductor. IGBTs are commonly used in electronic devices and systems for switching and amplifying electrical power. The "160" typically denotes the current rating, which is 160 Amperes, while "60" signifies the voltage rating, 600 Volts. The "UF" in the model number often indicates ultra-fast switching capabilities, making it suitable for high-efficiency applications.
This IGBT is designed for use in applications such as inverters, power supplies, and motor drives where efficient power management is critical. The device typically includes features like low on-state voltage, high current handling, and robust thermal management capabilities, contributing to reduced energy losses and improved performance in power conversion systems.
Understanding the specific parameters and features of the SGL160N60UFDTU can aid engineers in selecting the right component for their power electronics applications, ensuring optimal performance and reliability.

Equivalent

The SGL160N60UFDTU is an IGBT designed for power applications. Equivalent products would generally include other 600V IGBTs with similar current ratings and switching capabilities. Some potential equivalents are:
1. Infineon IKW40N60H3
2. STMicroelectronics STGB20H60DF
3. Fairchild (now onsemi) FGH40N60SFD
4. Mitsubishi CM600HA-24H
It's important to verify specific application requirements and datasheets, as there may be variations in packaging and other specifications.

Features

The SGL160N60UFDTU is a power MOSFET designed for efficient power management applications. Key features include:
1. High Voltage Capability: It supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.

2. Current Handling: It can handle a continuous drain current (I_D) of 160A, which allows it to manage significant power loads.
3. Low On-Resistance: Features low R_DS(on) for reduced conduction losses, enhancing efficiency.
4. Fast Switching: The device is designed for fast switching speeds, which contribute to reduced energy loss and improved performance in switching applications.
5. Robust Design: It includes rugged construction to withstand high energy pulses and offers reliability in demanding environments.
6. Thermal Management: Comes with an efficient thermal design to manage heat dissipation effectively.
7. Package Type: Typically available in a TO-247 package, which provides a compact and efficient footprint for mounting on a circuit board.
These features make the SGL160N60UFDTU ideal for use in applications such as power supplies, inverters, and motor controls.

Pinout

The SGL160N60UFDTU is an IGBT (Insulated Gate Bipolar Transistor) used in power electronics applications. It typically comes in a TO-247 package. The pin count for a standard TO-247 package is three pins, which correspond to the following functions:
1. Gate (G): This pin is used to control the IGBT. A voltage applied here determines the conduction state of the device.

2. Collector (C): This is the main terminal through which the current enters the IGBT when it is in the 'on' state.

3. Emitter (E): This terminal is where the current exits the IGBT.
These pins are crucial for the switching and amplification tasks performed by the IGBT in various electrical circuits. The SGL160N60UFDTU is specifically designed for high efficiency and fast switching, making it suitable for use in applications such as motor drives and power inverters.

Manufacturer

The SGL160N60UFDTU is manufactured by Rohm Semiconductor. Rohm Semiconductor is a Japanese company that specializes in the design and manufacturing of electronic components. These components include integrated circuits (ICs), semiconductors, and other electronic parts used in a variety of applications, such as consumer electronics, telecommunications, and automotive industries. Rohm is known for its innovation in semiconductor technology and provides solutions that are essential for modern electronic devices.

Application

The SGL160N60UFDTU is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various applications requiring efficient power switching. Its application areas include:
1. Industrial Motor Drives: Enhances energy efficiency and performance in motors.
2. Power Inverters: Used in renewable energy systems like solar and wind to convert DC to AC.
3. Uninterruptible Power Supplies (UPS): Provides reliable power backup by efficiently managing current flow.
4. Welding Equipment: Offers precise control in welding power supplies.
5. HVAC Systems: Improves operational efficiency and energy savings.
These applications benefit from the IGBT's fast switching, high voltage capabilities, and low power loss.

Package

The SGL160N60UFDTU is typically available in a TO-247 package type. This package is designed for high power applications, providing efficient thermal management and suitable for mounting on a heatsink.

SGL160N60UFDTU과 관련된 제품