사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package / Case | Tube |
| Part Status | Obsolete |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown(Max) | 900 V |
| Current - Collector(Ic)(Max) | 60 A |
| Current - Collector Pulsed(Icm) | 120 A |
| Vce(on)(Max) @ Vge Ic | 2.7V @ 15V, 60A |
| Power - Max | 180 W |
| Input Type | Standard |
| Gate Charge | 260 nC |
| Reverse Recovery Time (trr) | 1.5 µs |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
