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SI1416EDH-T1-GE3
+BOMMOSFET N-CH 30V 3.9A SOT-363
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제조업체 부품 #SI1416EDH-T1-GE3
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사양
| 속성 | 가치 |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Vgs (Max) | ±12V |
| Power Dissipation (Max) | 2.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-70-6 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Base Product Number | SI1416 |
개요
Description
The SI1416EDH-T1-GE3 is a high-performance, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management in various applications, including DC-DC converters, battery management systems, and load switching. It features a low on-resistance and fast switching capabilities, making it suitable for high-efficiency power designs.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 16A, ensuring reliable performance in demanding conditions. The device is packaged in a compact, surface-mount DPAK (TO-252) format, which aids in thermal management and space-saving on PCBs.
Additionally, the SI1416EDH-T1-GE3 is characterized by low gate charge, contributing to reduced switching losses and improved overall efficiency. Its robust design and reliability make it ideal for consumer electronics, automotive applications, and industrial controls. Overall, this MOSFET is a versatile component for enhancing power efficiency in modern electronic circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 16A, ensuring reliable performance in demanding conditions. The device is packaged in a compact, surface-mount DPAK (TO-252) format, which aids in thermal management and space-saving on PCBs.
Additionally, the SI1416EDH-T1-GE3 is characterized by low gate charge, contributing to reduced switching losses and improved overall efficiency. Its robust design and reliability make it ideal for consumer electronics, automotive applications, and industrial controls. Overall, this MOSFET is a versatile component for enhancing power efficiency in modern electronic circuits.
Equivalent
The SI1416EDH-T1-GE3 is a N-channel MOSFET from Vishay. Equivalent products include the BSS138, IRLML2402, and SI2302, which offer similar specifications such as voltage rating, current handling, and on-resistance. Always verify the exact parameters and applications to ensure compatibility.
Features
The SI1416EDH-T1-GE3 is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage of 30V.
2. Current Rating: The device can handle continuous drain currents up to 9.3A.
3. Low RDS(on): It boasts a low on-resistance, typically around 10.5 mΩ at VGS = 10V, enhancing efficiency and thermal performance.
4. Fast Switching Speed: The MOSFET is optimized for fast switching applications, reducing switching losses.
5. Thermal Performance: It has an operational temperature range from -55°C to +150°C, suitable for various environments.
6. Package Type: Available in a compact SO-8 package, facilitating space-saving designs.
7. Applications: Commonly used in DC-DC converters, load switching, and power management systems.
These features make the SI1416EDH-T1-GE3 a popular choice for designers seeking reliability and efficiency in their electronic systems.
1. Voltage Rating: It supports a maximum drain-source voltage of 30V.
2. Current Rating: The device can handle continuous drain currents up to 9.3A.
3. Low RDS(on): It boasts a low on-resistance, typically around 10.5 mΩ at VGS = 10V, enhancing efficiency and thermal performance.
4. Fast Switching Speed: The MOSFET is optimized for fast switching applications, reducing switching losses.
5. Thermal Performance: It has an operational temperature range from -55°C to +150°C, suitable for various environments.
6. Package Type: Available in a compact SO-8 package, facilitating space-saving designs.
7. Applications: Commonly used in DC-DC converters, load switching, and power management systems.
These features make the SI1416EDH-T1-GE3 a popular choice for designers seeking reliability and efficiency in their electronic systems.
Pinout
The SI1416EDH-T1-GE3 is a dual N-channel MOSFET with a pin count of 6. Its primary functions include being utilized in power management applications, especially in switching and load control. The specific pin configuration is as follows:
1. Gate1 - Control input for the first N-channel MOSFET.
2. Source1 - Source terminal for the first N-channel MOSFET.
3. Drain1 - Drain terminal for the first N-channel MOSFET.
4. Gate2 - Control input for the second N-channel MOSFET.
5. Source2 - Source terminal for the second N-channel MOSFET.
6. Drain2 - Drain terminal for the second N-channel MOSFET.
The device operates efficiently with low on-resistance and is suitable for various applications, including power switching and load driving in portable and battery-operated devices.
1. Gate1 - Control input for the first N-channel MOSFET.
2. Source1 - Source terminal for the first N-channel MOSFET.
3. Drain1 - Drain terminal for the first N-channel MOSFET.
4. Gate2 - Control input for the second N-channel MOSFET.
5. Source2 - Source terminal for the second N-channel MOSFET.
6. Drain2 - Drain terminal for the second N-channel MOSFET.
The device operates efficiently with low on-resistance and is suitable for various applications, including power switching and load driving in portable and battery-operated devices.
Manufacturer
The SI1416EDH-T1-GE3 is manufactured by Silicon Labs, a global semiconductor company based in Austin, Texas. Silicon Labs specializes in developing innovative solutions for various applications including connectivity, timing, and power management. The company focuses on providing high-performance analog and mixed-signal integrated circuits, microcontrollers, and wireless technology for the Internet of Things (IoT), automotive, and industrial markets. Silicon Labs is known for its commitment to quality and performance, and it serves a wide range of industries by delivering products that enable smart, connected devices.
Application
The SI1416EDH-T1-GE3 is a dual N-channel MOSFET designed for use in various applications, including power management, load switching, and battery management in portable devices. It is suitable for use in DC-DC converters, LED drivers, and motor control circuits. Additionally, its low on-resistance and fast switching speeds make it ideal for high-efficiency power supplies and energy-saving applications in consumer electronics, automotive systems, and industrial equipment.
Package
The SI1416EDH-T1-GE3 is packaged in a 6-lead SC-70 type package. This compact surface-mount package is designed for space-constrained applications.
