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SI1902DL-T1-E3
+BOMMOSFET 2N-CH 20V 0.66A SC70-6
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제조업체실리콘 닉스
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제조업체 부품 #SI1902DL-T1-E3
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데이터시트 SI1902DL-T1-E3 DataSheet
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패키지 SC-88
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재고23118
365 1일 품질 보증
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90-판매 후 1일 보증
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사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 660mA |
| Rds On(Max) @ Id Vgs | 385mOhm @ 660mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.2nC @ 4.5V |
| Power - Max | 270mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
개요
Description
The introduction to this module would likely cover key elements such as objectives, scope, learning outcomes, and an overview of the topics to be discussed. It might also provide guidance on how to navigate the course materials, expectations for student participation and assessment, and any relevant resources or tools needed for successful completion. The introduction aims to equip students with foundational knowledge and understanding to engage effectively with the course content. For specific details, one would need to refer to the course syllabus or accompanying documentation provided by the educational institution or organization offering the module.
Equivalent
1. FDS6679: A Fairchild MOSFET with similar voltage and current ratings.
2. NTD4963N: An ON Semiconductor MOSFET with comparable specifications.
3. IRF7389: An Infineon MOSFET with similar characteristics.
Ensure compatibility by checking the specific electrical parameters and package type of each alternative.
Features
1. Type: N-channel MOSFET.
2. Voltage: This device typically operates at a low voltage. The maximum drain-source voltage (V_DS) is around 20V.
3. Current: It supports a continuous drain current (I_D) of up to approximately 1.6A.
4. R_DS(on): It has a low on-resistance, which minimizes power loss and improves efficiency. The typical R_DS(on) is around 0.1 ohms.
5. Package: It is usually available in a compact SOT-23 package, which is suitable for space-constrained applications.
6. Applications: Commonly used in battery-powered applications, load switches, and DC-DC converters due to its efficient performance.
7. Temperature Range: Operates within a standard temperature range for electronic components, ensuring reliability in various environments.
These features make the SI1902DL-T1-E3 suitable for applications requiring efficient switching and low power dissipation.
Pinout
1. Pin 1: Source 1 (S1) - The source terminal of the first MOSFET.
2. Pin 2: Gate 1 (G1) - The gate terminal of the first MOSFET.
3. Pin 3: Source 2 (S2) - The source terminal of the second MOSFET.
4. Pin 4: Gate 2 (G2) - The gate terminal of the second MOSFET.
5. Pin 5: Drain 2 (D2) - The drain terminal of the second MOSFET.
6. Pin 6: Drain 1 (D1) - The drain terminal of the first MOSFET.
This configuration is often used for load switching, battery management, or level shifting applications.
