사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 3.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 68mOhm @ 2.9A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 320 pF @ 15 V |
| PowerDissipation(Max) | 1.1W (Ta), 1.7W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
개요
Description
The SI2300DS-T1-GE3 is a N-channel MOSFET from Vishay, designed for low-voltage, high-efficiency applications. Key features include:
- 30V drain-source voltage (VDS)
- 5.3A continuous drain current (ID)
- Low on-resistance (RDS(on)) of 28mΩ at 4.5V gate drive
- Compact PowerPAK® SC-70 package for space-constrained designs
Ideal for load switching, power management, and DC-DC conversion in portable electronics, battery-powered devices, and automotive systems. Its low gate charge and fast switching enhance efficiency in high-frequency circuits.
For detailed specs, refer to the datasheet.
- 30V drain-source voltage (VDS)
- 5.3A continuous drain current (ID)
- Low on-resistance (RDS(on)) of 28mΩ at 4.5V gate drive
- Compact PowerPAK® SC-70 package for space-constrained designs
Ideal for load switching, power management, and DC-DC conversion in portable electronics, battery-powered devices, and automotive systems. Its low gate charge and fast switching enhance efficiency in high-frequency circuits.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the SI2300DS-T1-GE3 (P-channel MOSFET, 20V, 3.7A) include:
- AO3401A (20V, 4A)
- DMG2305UX (20V, 4.3A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact specs like Vgs, Rds(on), and package compatibility.
- AO3401A (20V, 4A)
- DMG2305UX (20V, 4.3A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact specs like Vgs, Rds(on), and package compatibility.
Features
The SI2300DS-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V drain-to-source (VDS).
- Current Rating: -4.3A continuous drain current (ID).
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V.
- Gate Threshold: -0.7V (typical), ensuring low-voltage drive compatibility.
- Fast Switching: Low gate charge (Qg = 6.5nC) for efficient performance.
- Package: SOT-23 (3-pin), compact and space-saving.
- Applications: Power management, load switching, and battery protection in portable devices.
Designed for efficiency and reliability in low-voltage circuits.
- Voltage Rating: -20V drain-to-source (VDS).
- Current Rating: -4.3A continuous drain current (ID).
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V.
- Gate Threshold: -0.7V (typical), ensuring low-voltage drive compatibility.
- Fast Switching: Low gate charge (Qg = 6.5nC) for efficient performance.
- Package: SOT-23 (3-pin), compact and space-saving.
- Applications: Power management, load switching, and battery protection in portable devices.
Designed for efficiency and reliability in low-voltage circuits.
Pinout
The SI2300DS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (P-channel).
3. Drain (D) – Output terminal, connects to the load.
Key Features:
- Voltage Rating: -20V
- Current Rating: -4.3A (continuous)
- Low RDS(on): ~50mΩ (at VGS = -4.5V)
- Logic-Level Gate Drive (suitable for 3V/5V control).
Commonly used for power switching, load control, and DC-DC conversion.
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (P-channel).
3. Drain (D) – Output terminal, connects to the load.
Key Features:
- Voltage Rating: -20V
- Current Rating: -4.3A (continuous)
- Low RDS(on): ~50mΩ (at VGS = -4.5V)
- Logic-Level Gate Drive (suitable for 3V/5V control).
Commonly used for power switching, load control, and DC-DC conversion.
Application
The SI2300DS-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching, and DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Consumer Electronics – Power control in smartphones, tablets, and wearables.
4. Automotive Systems – Low-voltage applications like infotainment and lighting.
5. Industrial Controls – Switching and power distribution in small-scale industrial devices.
Its compact SOT-23 package and low on-resistance make it ideal for space-constrained, efficient power handling.
1. Power Management – Voltage regulation, load switching, and DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Consumer Electronics – Power control in smartphones, tablets, and wearables.
4. Automotive Systems – Low-voltage applications like infotainment and lighting.
5. Industrial Controls – Switching and power distribution in small-scale industrial devices.
Its compact SOT-23 package and low on-resistance make it ideal for space-constrained, efficient power handling.
Package
The SI2300DS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 surface-mount package. It is compact, suitable for low-power applications, and designed for efficient switching performance. The package type ensures easy PCB integration with three leads.
