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SI2328DS-T1-E3
+BOMMOSFET N-CH 100V 1.15A SOT23-3
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제조업체실리콘 닉스
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제조업체 부품 #SI2328DS-T1-E3
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사양
| 속성 | 가치 |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1.15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 730mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2328 |
개요
Description
The SI2328DS-T1-E3 is a dual N-channel MOSFET designed for high-performance applications, including power management and switching. This component features low on-resistance (R_DS(on)), enabling efficient power conversion and reduced heat generation. It typically has a maximum drain-source voltage (V_DS) rating of 30V and can handle continuous drain currents up to 62A, making it suitable for various applications, including DC-DC converters, motor drive circuits, and power supplies.
The device comes in a compact, surface-mount DPAK package, enhancing thermal performance and facilitating easier integration into printed circuit boards (PCBs). The SI2328DS-T1-E3 is known for its fast switching capabilities, which help improve overall system efficiency. With its combination of robust performance and reliability, it is widely used in consumer electronics, automotive, and industrial applications.
The device comes in a compact, surface-mount DPAK package, enhancing thermal performance and facilitating easier integration into printed circuit boards (PCBs). The SI2328DS-T1-E3 is known for its fast switching capabilities, which help improve overall system efficiency. With its combination of robust performance and reliability, it is widely used in consumer electronics, automotive, and industrial applications.
Equivalent
The SI2328DS-T1-E3 is an N-channel MOSFET. Equivalent products include the BSS138, SI2302, and AO3400. Always verify specifications like voltage, current ratings, and package type to ensure compatibility with your application.
Features
The SI2328DS-T1-E3 is a dual N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 30A, allowing it to handle significant loads.
3. R_DS(on): Low on-resistance, typically around 10 mΩ, which helps minimize power loss and increase efficiency during operation.
4. Package Type: Available in a compact DPAK package, facilitating easy mounting and efficient thermal management.
5. Fast Switching: Designed for rapid switching applications, making it ideal for use in DC-DC converters and motor drivers.
6. Thermal Performance: Features good thermal characteristics to prevent overheating during high-load conditions.
7. Applications: Suitable for use in power supplies, battery management systems, and various consumer electronics.
Overall, the SI2328DS-T1-E3 is an effective choice for efficient power management in compact designs.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 30A, allowing it to handle significant loads.
3. R_DS(on): Low on-resistance, typically around 10 mΩ, which helps minimize power loss and increase efficiency during operation.
4. Package Type: Available in a compact DPAK package, facilitating easy mounting and efficient thermal management.
5. Fast Switching: Designed for rapid switching applications, making it ideal for use in DC-DC converters and motor drivers.
6. Thermal Performance: Features good thermal characteristics to prevent overheating during high-load conditions.
7. Applications: Suitable for use in power supplies, battery management systems, and various consumer electronics.
Overall, the SI2328DS-T1-E3 is an effective choice for efficient power management in compact designs.
Pinout
The SI2328DS-T1-E3 is a dual N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplifying signals in electronic circuits. Specifically, it is designed for applications such as power management, load switching, and drive circuits. The pin configuration typically includes:
1. Gate 1 (G1): Controls the first MOSFET.
2. Drain 1 (D1): Output for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second MOSFET.
5. Drain 2 (D2): Output for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET.
7. Drain 1 (D1) and Drain 2 (D2) are connected to the load.
8. Source 1 (S1) and Source 2 (S2) connect to ground or the negative side of the power supply.
This configuration allows for parallel operation or independent control of two MOSFETs in a compact package.
1. Gate 1 (G1): Controls the first MOSFET.
2. Drain 1 (D1): Output for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second MOSFET.
5. Drain 2 (D2): Output for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET.
7. Drain 1 (D1) and Drain 2 (D2) are connected to the load.
8. Source 1 (S1) and Source 2 (S2) connect to ground or the negative side of the power supply.
This configuration allows for parallel operation or independent control of two MOSFETs in a compact package.
Manufacturer
The SI2328DS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, and is known for its wide range of products, including diodes, transistors, capacitors, and resistors. Vishay serves various industries such as automotive, industrial, consumer electronics, and telecommunications. The SI2328DS-T1-E3 itself is a N-channel MOSFET known for its low on-resistance and high efficiency, making it suitable for applications in power management and switching. Vishay's commitment to innovation and quality has established it as a key player in the electronics industry.
Application
The SI2328DS-T1-E3 is a N-channel MOSFET designed for various applications, including power management, load switching, and DC-DC converters. It is commonly used in consumer electronics, automotive systems, and industrial automation for efficient power conversion and control. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, motor drivers, and high-speed switching applications. Additionally, it is utilized in power supplies and LED drivers to enhance energy efficiency and thermal performance.
Package
The SI2328DS-T1-E3 is packaged in a SO-8 (Small Outline 8-lead) surface mount package. This compact package design is suitable for various applications, providing efficient thermal performance and space-saving benefits for integrated circuits.
